SO T2 3 PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4230T. 1.2 Features and benefits Low collector-emiter saturation voltage VCEsat Higher efficiency leading to less heat generation High collector current capability: IC and ICM AEC-Q101 qualified 1.3 Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -30 V IC collector current - - -2 A ICM peak collector current single pulse; tp ≤ 1 ms - - -3 A RCEsat collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 160 220 Ω PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 3 1 1 2 2 SOT23 (TO-236AB) sym013 3. Ordering information Table 3. Ordering information Type number Package PBSS5230T Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS5230T %3G [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -30 V VCEO collector-emitter voltage open base - -30 V VEBO emitter-base voltage open collector - -5 V IC collector current - -2 A ICM peak collector current IB base current Ptot total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C - -3 A - -300 mA [1] - 300 mW [2] - 480 mW Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. PBSS5230T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 June 2012 © NXP B.V. 2012. All rights reserved. 2 of 10 PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ Max Unit [1] - - 417 K/W [2] - - 260 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -30 V; IE = 0 A; Tj = 150 °C - - -50 µA IEBO emitter-base cut-off current VEB = -4 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -2 V; IC = -100 mA; Tamb = 25 °C 300 450 - VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 200 290 - VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 100 180 - VCEsat collector-emitter saturation voltage IC = -500 mA; IB = -50 mA; Tamb = 25 °C - -70 -110 mV IC = -1 A; IB = -50 mA; Tamb = 25 °C - -140 -225 mV IC = -2 A; IB = -200 mA; Tamb = 25 °C - -240 -350 mV RCEsat collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 160 220 Ω VBEsat base-emitter saturation IC = -2 A; IB = -50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -1.1 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -100 mA; Tamb = 25 °C - - -0.75 V fT transition frequency VCE = -10 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C 100 200 - MHz Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 23 28 pF PBSS5230T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 10 PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor mhc064 1000 006aad091 -3000 hFE IB (mA) = -23 -20.7 -18.4 IC (mA) 800 -16.1 (1) -13.8 -2000 -11.5 -9.2 600 -6.9 (2) -4.6 400 -1000 -2.3 (3) 200 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 -1 -2 -3 -4 -5 VCE (V) VCE = -2 V Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig 1. DC current gain as a function of collector current; typical values mhc067 −1200 VBE (mV) Fig 2. Collector current as a function of collector-emitter voltage; typical values mhc066 −1200 VBEsat (V) −1000 −1000 −800 (1) −600 −800 (1) −600 (2) (2) −400 (3) −400 −200 (3) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) −200 −10−1 −10 (1) Tamb = -55 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values PBSS5230T Product data sheet −102 −103 −104 IC (mA) IC/IB = 20 VCE = -2 V Fig 3. −1 Fig 4. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 10 PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor mhc068 −103 mhc069 103 RCEsat (Ω) VCEsat (mV) 102 −102 (1) (2) (3) 10 −10 (1) (2) (3) 1 −1 −10−1 Fig 5. −1 −10 −102 10−1 −10−1 −103 −104 IC (mA) −1 −10 IC/IB = 20 IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = -55 °C Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. −102 −103 −104 IC (mA) Collector-emitter saturation resistance as a function of collector current; typical values 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm Fig 7. 0.15 0.09 04-11-04 Package outline SOT23 (TO-236AB) PBSS5230T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 10 PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 Fig 8. sot023_fr Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 Fig 9. sot023_fw Wave soldering footprint for SOT23 (TO-236AB) PBSS5230T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 10 PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5230T v.2 20120604 Product data sheet - PBSS5230T v.1 Modifications: PBSS5230T v.1 PBSS5230T Product data sheet • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • Legal texts have been adapted to the new company name where appropriate. 1 “Product profile”: updated 4 “Marking”: corrected Table 5.: updated 7 “Characteristics”: VCEsat corrected, Fig 1. to Fig 6. added 8 “Test information”: added 9 “Package outline”: replaced by minimized package outline drawing 10 “Soldering”: added 20031218 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 June 2012 - © NXP B.V. 2012. All rights reserved. 7 of 10 PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of NXP Semiconductors. PBSS5230T Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 10 PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PBSS5230T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 10 PBSS5230T NXP Semiconductors 30 V, 2 A PNP low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .5 Quality information . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .5 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .7 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Contact information. . . . . . . . . . . . . . . . . . . . . . .9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 June 2012 Document identifier: PBSS5230T