DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage −40 V IC collector current (DC) −2 A ICM peak collector current −3 A RCEsat equivalent on-resistance <220 mΩ • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistor. PARAMETER MAX. UNIT PINNING APPLICATIONS PIN • Supply line switching circuits DESCRIPTION • Battery management applications 1 base • DC/DC converter applications 2 emitter • Strobe flash units 3 collector • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION handbook, halfpage PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4240T. 3 3 1 MARKING MARKING CODE(1) TYPE NUMBER PBSS5240T 2 1 2 ZF* Top view MAM256 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5240T 2004 Jan 15 − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −2 A ICM peak collector current − −3 A IBM peak base current − −300 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW Tamb ≤ 25 °C; note 2 − 480 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2. 2004 Jan 15 3 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = −30 V; IE = 0 TYP. MAX. UNIT − − −100 nA VCB = −30 V; IE = 0; Tj = 150 °C − − −50 μA − − −100 nA IC = −100 mA 300 450 − IC = −500 mA 260 350 − IC = −1 A 210 290 − IC = −2 A 100 180 − − −55 −100 mV IC = −500 mA; IB = −50 mA − −70 −110 mV IC = −750 mA; IB = −15 mA − −140 −225 mV IC = −1 A; IB = −50 mA − −140 −225 mV IC = −2 A; IB = −200 mA − −240 −350 mV IBEO emitter-base cut-off current VEB = −4 V; IC = 0 hFE DC current gain VCE = −2 V VCEsat MIN. collector-emitter saturation voltage IC = −100 mA; IB = −1 mA RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 160 <220 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −200 mA − − −1.1 V VBE(on) base-emitter turn-on voltage VCE = −2 V; IC = −100 mA − − −0.75 V fT transition frequency IC = −100 mA; VCE = −10 V; f = 100 MHz 100 200 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 23 28 pF Note 1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. 2004 Jan 15 4 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T MHC064 1000 MHC067 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 (1) −600 (2) 600 (2) 400 −400 (3) (3) 200 −200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 VCE = −2V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC066 −1200 −10 −102 Base-emitter voltage as a function of collector current; typical values. MHC068 −103 handbook, halfpage handbook, halfpage VBEsat (V) −103 −104 IC (mA) VCEsat (mV) −1000 −102 −800 (1) −600 (2) (1) (2) (3) −10 −400 (3) −200 −10−1 −1 −10 −102 −1 −10−1 −103 −104 IC (mA) −1 IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 15 5 −10 −102 −103 −104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T MHC065 −3000 handbook, halfpage (1) (2) (3) (4) IC (mA) MHC069 103 handbook, halfpage RCEsat (Ω) (5) 102 (6) −2000 (7) (8) 10 (9) −1000 (10) 0 −1 0 (1) (2) (3) (4) IB = −23.0 mA. IB = −20.7 mA. IB = −18.4 mA. IB = −16.1 mA. Fig.6 −2 −3 (5) IB = −13.8 mA. (6) IB = −11.5 mA. (7) IB = −9.2 mA. −4 10−1 −10−1 −5 VCE (V) −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (8) IB = −6.9 mA. (9) IB = −4.6 mA. (10) IB = −2.3 mA. Collector current as a function of collector-emitter voltage; typical values. 2004 Jan 15 (1) (2) (3) 1 Fig.7 6 Equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 15 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 7 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 15 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp9 Date of release: 2004 Jan 15 Document order number: 9397 750 12439