PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PBSS4032SP Package NXP Name NPN/NPN complement SOT96-1 SO8 PBSS4032SN NPN/PNP complement PBSS4032SPN 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - −30 V - - −4.8 A - - −10 A - 65 98 mΩ VCEO collector-emitter voltage IC collector current ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −4 A; IB = −0.4 A [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 emitter TR2 4 base TR2 5 collector TR2 6 collector TR2 7 collector TR1 8 collector TR1 Simplified outline 8 Graphic symbol 8 5 7 TR1 1 4 1 6 5 TR2 2 3 4 006aaa976 3. Ordering information Table 4. Ordering information Type number PBSS4032SP Package Name Description Version SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS4032SP 4032SP 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor PBSS4032SP Product data sheet VCBO collector-base voltage open emitter - −30 V VCEO collector-emitter voltage open base - −30 V VEBO emitter-base voltage open collector - −5 V IC collector current - −4.8 A ICM peak collector current - −10 A IB base current Ptot total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 - −1 A [1] - 0.73 W [2] - 1 W [3] - 1.7 W © NXP B.V. 2010. All rights reserved. 2 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 0.86 W [2] - 1.4 W [3] - 2.3 W Per device Ptot Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac290 3.0 Ptot (W) (1) 2.0 (2) 1.0 0.0 −75 (3) −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. PBSS4032SP Product data sheet Per device: Power derating curves All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - - 170 K/W [2] - - 125 K/W [3] - - 75 K/W - - 40 K/W [1] - - 145 K/W [2] - - 90 K/W [3] - - 55 K/W Per transistor thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Per device thermal resistance from junction to ambient Rth(j-a) in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac291 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032SP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 006aac292 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac293 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4032SP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB = −30 V; IE = 0 A - - −100 nA VCB = −30 V; IE = 0 A; Tj = 150 °C - - −50 μA ICES collector-emitter cut-off current VCE = −24 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V IC = −500 mA 200 380 - IC = −1 A 200 330 - IC = −2 A 150 250 - IC = −4 A 60 100 - 40 60 - IC = −1 A; IB = −50 mA - −115 −165 mV IC = −1 A; IB = −10 mA - −170 −240 mV IC = −2 A; IB = −40 mA - −210 −300 mV IC = −4 A; IB = −400 mA - −260 −390 mV IC = −4 A; IB = −200 mA - −300 −450 mV - −340 −510 mV - 65 98 mΩ - −0.8 −0.9 V [1] IC = −5 A VCEsat collector-emitter saturation voltage [1] IC = −5 A; IB = −250 mA RCEsat collector-emitter IC = −4 A; IB = −400 mA saturation resistance [1] VBEsat base-emitter saturation voltage [1] IC = −1 A; IB = −100 mA IC = −4 A; IB = −400 mA VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A td delay time VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A Product data sheet - −0.99 −1.1 V - −0.81 −0.9 V - 30 - ns tr rise time - 60 - ns ton turn-on time - 90 - ns ts storage time - 140 - ns tf fall time - 80 - ns toff turn-off time - 220 - ns fT transition frequency - 115 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 85 - pF [1] PBSS4032SP [1] VCE = −10 V; IC = −100 mA; f = 100 MHz Pulse test: tp ≤ 300 μs; δ ≤ 0.02. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 006aac294 800 hFE 006aac295 −12.0 IB (mA) = −600 IC (A) (1) −480 −360 600 −8.0 −240 (2) −540 −420 −300 −180 −120 400 −60 −4.0 (3) 200 0 −10−1 −1 −10 −102 0.0 0.0 −103 −104 IC (mA) VCE = −2 V −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aac296 −1.4 VBE (V) Fig 6. Collector current as a function of collector-emitter voltage; typical values 006aac297 −1.4 VBEsat (V) −1.0 −1.0 (1) (1) −0.6 −0.6 (2) (2) (3) (3) −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 VCE = −2 V −1 (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Product data sheet −103 −104 IC (mA) (1) Tamb = −55 °C (2) Tamb = 25 °C PBSS4032SP −102 IC/IB = 20 (1) Tamb = −55 °C Fig 7. −10 Fig 8. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 006aac298 −1 006aac299 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (1) (2) (2) (3) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −102 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values 006aac300 103 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) 102 102 10 10 1 006aac301 103 RCEsat (Ω) 1 (1) (1) (2) 10−1 10−1 −1 −10 −102 −103 −104 IC (mA) 10−2 −10−1 −1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C PBSS4032SP (2) (3) (3) 10−2 −10−1 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C Fig 9. −10 Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A Fig 14. Test circuit for switching times PBSS4032SP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 9. Package outline 5.0 4.8 1.75 1.0 0.4 6.2 5.8 4.0 3.8 pin 1 index 1.27 0.49 0.36 Dimensions in mm 0.25 0.19 03-02-18 Fig 15. Package outline SOT96-1 (SO8) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS4032SP [1] PBSS4032SP Product data sheet Package SOT96-1 Description 8 mm pitch, 12 mm tape and reel Packing quantity 1000 2500 -115 -118 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 11. Soldering 5.50 0.60 (8×) 1.30 4.00 6.60 7.00 1.27 (6×) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 16. Reflow soldering footprint SOT96-1 (SO8) 1.20 (2×) 0.60 (6×) enlarged solder land 0.3 (2×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 board direction solder lands occupied area solder resist placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 17. Wave soldering footprint SOT96-1 (SO8) PBSS4032SP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4032SP v.2 20101013 Product data sheet - PBSS4032SP v.1 Modifications: PBSS4032SP v.1 PBSS4032SP Product data sheet • Figure 1 “Per device: Power derating curves”: updated. 20100714 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 - © NXP B.V. 2010. All rights reserved. 12 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 13. 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Export might require a prior authorization from national authorities. PBSS4032SP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 13 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS4032SP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 PBSS4032SP NXP Semiconductors 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 October 2010 Document identifier: PBSS4032SP