FAIRCHILD NZT560A_09

NZT560/NZT560A
NPN Low Saturation Transistor
Features
2
• These devices are designed with high current gain and low saturation voltage with
collector currents up to 3A continuous.
3
2
1
1. Base
Absolute Maximum Ratings*
Symbol
2. Collector
3. Emitter
TA=25°C unless otherwise noted
Parameter
Ratings
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current - Continuous
3
A
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150°C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
TA=25°C unless otherwise noted
Max.
Symbol
Parameter
Units
NZT560
PD
Total Device Dissipation
RθJA
Thermal Resistance, Junction to Ambient
© 2009 Fairchild Semiconductor Corporation
NZT560/NZT560A Rev. D1
NZT560A
1
W
125
°C/W
www.fairchildsemi.com
1
NZT560/NZT560A — NPN Low Saturation Transistor
May 2009
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Off Characteristics
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
60
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA
80
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA
5
V
ICBO
Collector Cutoff Current
VCB = 30V
VCB = 30V, TA = 100°C
100
10
nA
µA
IEBO
Emitter Cutoff Current
VEB = 4V
100
nA
On Characteristics *
hFE
DC Current Gain
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
NZT560
NZT560A
IC = 1A, VCE = 2V
IC = 3A, VCE = 2V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
70
100
250
80
25
NZT560
NZT560A
300
550
300
450
400
mV
mV
mV
1.25
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 100mA
VBE(on)
Base-Emitter On Voltage
IC = 1A, VCE = 2V
1
V
30
pF
Small Signal Characteristics
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
fT
Transition Frequency
IC = 100mA, VCE = 5V, f = 100MHz
75
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
© 2009 Fairchild Semiconductor Corporation
NZT560/NZT560A Rev. D1
www.fairchildsemi.com
2
NZT560/NZT560A — NPN Low Saturation Transistor
Electrical Characteristics TA=25°C unless otherwise noted
VBEON- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter On Voltage vs.
Collector Current
1.4
Vce = 2.0V
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.0001
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
Figure 2. Base-Emitter On Voltage
vs Collector Current
Input/Output Capacitance vs.
Reverse Bias Voltage
450
f = 1.0 MHz
CAPACITANCE (pf)
400
350
C ibo
300
250
200
150
100
C obo
50
0
0.1
0.2
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
50
100
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
700
400
VCE = 2 V
NZT560A
NZT560
300
hFE- DC CURRENT GAIN
600
hFE- DC CURRENT GAIN
0.5 1
2
5
10 20
V CE - COLLECTOR VOLTAGE (V)
o
TA=150 C
o
25 C
200
o
-40 C
100
0
0.001
0.010
0.100
1.000
o
400
25 C
VCE = 2 V
300
o
-40 C
200
100
0.010
0.100
1.000
10.000
IC- COLLECTOR CURRENT [A]
IC- COLLECTOR CURRENT [A]
Figure 5. Current Gain vs Collector Current
Figure 6. Current Gain vs Collector Current
© 2009 Fairchild Semiconductor Corporation
NZT560/NZT560A Rev. D1
500
0
0.001
10.000
o
TA=125 C
www.fairchildsemi.com
3
NZT560/NZT560A — NPN Low Saturation Transistor
Typical Performance Characteristics
NZT560/NZT560A — NPN Low Saturation Transistor
Physical Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
+0.10
0.25 –0.05
7.00 ±0.30
(0.60)
0.70 ±0.10
(0.95)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
0°~
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
NZT560/NZT560A Rev. D1
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com