NZT560/NZT560A NPN Low Saturation Transistor Features 2 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 1. Base Absolute Maximum Ratings* Symbol 2. Collector 3. Emitter TA=25°C unless otherwise noted Parameter Ratings Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 3 A TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 150°C. 2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25°C unless otherwise noted Max. Symbol Parameter Units NZT560 PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient © 2009 Fairchild Semiconductor Corporation NZT560/NZT560A Rev. D1 NZT560A 1 W 125 °C/W www.fairchildsemi.com 1 NZT560/NZT560A — NPN Low Saturation Transistor May 2009 Symbol Parameter Test Conditions Min. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = 10mA 60 V BVCBO Collector-Base Breakdown Voltage IC = 100µA 80 V BVEBO Emitter-Base Breakdown Voltage IE = 100µA 5 V ICBO Collector Cutoff Current VCB = 30V VCB = 30V, TA = 100°C 100 10 nA µA IEBO Emitter Cutoff Current VEB = 4V 100 nA On Characteristics * hFE DC Current Gain IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V NZT560 NZT560A IC = 1A, VCE = 2V IC = 3A, VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 3A, IB = 300mA 70 100 250 80 25 NZT560 NZT560A 300 550 300 450 400 mV mV mV 1.25 V VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 1 V 30 pF Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz fT Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 75 MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% © 2009 Fairchild Semiconductor Corporation NZT560/NZT560A Rev. D1 www.fairchildsemi.com 2 NZT560/NZT560A — NPN Low Saturation Transistor Electrical Characteristics TA=25°C unless otherwise noted VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter On Voltage vs. Collector Current 1.4 Vce = 2.0V 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.0001 Figure 1. Base-Emitter Saturation Voltage vs Collector Current 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 Figure 2. Base-Emitter On Voltage vs Collector Current Input/Output Capacitance vs. Reverse Bias Voltage 450 f = 1.0 MHz CAPACITANCE (pf) 400 350 C ibo 300 250 200 150 100 C obo 50 0 0.1 0.2 Figure 3. Collector-Emitter Saturation Voltage vs Collector Current 50 100 Figure 4. Input/Output Capacitance vs Reverse Bias Voltage 700 400 VCE = 2 V NZT560A NZT560 300 hFE- DC CURRENT GAIN 600 hFE- DC CURRENT GAIN 0.5 1 2 5 10 20 V CE - COLLECTOR VOLTAGE (V) o TA=150 C o 25 C 200 o -40 C 100 0 0.001 0.010 0.100 1.000 o 400 25 C VCE = 2 V 300 o -40 C 200 100 0.010 0.100 1.000 10.000 IC- COLLECTOR CURRENT [A] IC- COLLECTOR CURRENT [A] Figure 5. Current Gain vs Collector Current Figure 6. Current Gain vs Collector Current © 2009 Fairchild Semiconductor Corporation NZT560/NZT560A Rev. D1 500 0 0.001 10.000 o TA=125 C www.fairchildsemi.com 3 NZT560/NZT560A — NPN Low Saturation Transistor Typical Performance Characteristics NZT560/NZT560A — NPN Low Saturation Transistor Physical Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP +0.10 0.25 –0.05 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 0°~ Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation NZT560/NZT560A Rev. D1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com