UNISONIC TECHNOLOGIES CO., LTD UTT25P06 −60V, −27.5A P-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC UTT25P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P06 is suitable for power supplies, converters, PWM motor controls and bridge circuits, etc. TO-251 * VDS = -60V * ID = -27.5A * RDS(ON)<0.075Ω @ VGS=-10V, ID=-12.5A; * RDS(ON)<0.082Ω @ VGS=-10V, ID=-25A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT25P06L-TA3-T UTT25P06G-TA3-T UTT25P06L-TF3-T UTT25P06G-TF3-T UTT25P06L-TM3-T UTT25P06G-TM3-T UTT25P06L-TN3-R UTT25P06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-220F 1 FEATURES 1 1 TO-252 Package TO-220 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel 1 of 5 QW-R502-595.E UTT25P06 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-595.E UTT25P06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Continuous VGSS ±15 V Gate-Source Voltage Non−Repetitive (tP≤10ms) VGSM ±20 V Continuous @ TA=25°C ID -27.5 A Drain Current Pulsed (tP≤10µs) IDM -80 A TO-220/TO-220F 2 W Power Dissipation @TA=25°C PD TO-251/TO-252 1.25 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When surface mounted to an FR4 board using 1" pad size (Cu Area 1.127 in2). 3. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in2). THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/TO-220F TO-251/TO-252 TO-220 TO-220F TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 100 1.2 4.5 2.5 UNIT °C/W °C/W °C/W °C/W °C/W 3 of 5 QW-R502-595.E UTT25P06 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Note 1) Drain-Source Leakage Current Forward Reverse ON CHARACTERISTICS (Note 1) Gate- Source Leakage Current SYMBOL BVDSS IDSS IGSS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS ID=-250µA, VGS=0V Positive Temperature Coefficient VGS=0V, VDS=−60V, TJ=25°C VGS=0V, VDS=−60V, TJ=150°C VGS=+15V, VDS=0V VGS=-15V, VDS=0V -60 VDS=VGS, ID=-250µA Negative Threshold Temperature Coefficient VGS=-10V, ID=-12.5A VGS=-10V, ID=-25A -1.2 DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=-25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 1, 2) Total Gate Charge QG Gate to Source Charge QGS VGS=-10V, VDS=-48V, ID=-25A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=-30V, ID=-1A, VGS=-10V, RG=9.1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 1) IS=-25A, VGS=0V Drain-Source Diode Forward Voltage VSD IS=-25 A, VGS=0V, TJ=150°C Body Diode Reverse Recovery Time tRR IS=-25A, VGS=0V, dlS/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Indicates Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. 2. Switching characteristics are independent of operating junction temperatures. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V mV/°C 64 -10 -100 +100 -100 -2.4 6.2 µA nA nA V mV/°C 0.05 0.075 0.055 0.082 Ω 1650 2200 140 250 125 180 pF pF pF 155 26 18 50 60 320 100 200 nC nC nC ns ns ns ns -1.8 -1.4 70 0.2 -2.5 60 118 480 160 V ns µC 4 of 5 QW-R502-595.E UTT25P06 Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate Threshold Voltage, -VTH (V) Drain Current, -ID (A) Drain Current, -ID (A) 0 20 60 80 100 40 Drain-Source Breakdown Voltage, -BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-595.E