UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed switching applications FEATURES * RDS(ON) < 0.08Ω @ VGS= -10V, ID= -15A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT30P06L-TA3-T UTT30P06G-TA3-T UTT30P06L-TF3-T UTT30P06G-TF3-T UTT30P06L-TM3-T UTT30P06G-TM3-T UTT30P06L-TN3-R UTT30P06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-622.E UTT30P06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Drain-Gate Voltage (RGS=1.0 MΩ) VDGR -60 V Continuous VGSS ±15 V Gate-Source Voltage Non−repetitive (tp≤10ms) VGSM ±25 V Continuous TC=25°C ID -30 A Drain Current Pulsed (tp≤10μs) IDM -105 A TO-220 89 W Power Dissipation PD TO-220F 47 W TO-251/TO-252 44 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When surface mounted to an FR4 board using the minimum recommended pad size. THERMAL DATA PARAMETER TO-220/TO-220F Junction to Ambient TO-251/TO-252 TO-220 Junction to Case TO-220F TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 110 1.4 2.66 2.84 UNIT °C/W °C/W °C/W °C/W °C/W 2 of 6 QW-R502-622.E UTT30P06 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Forward Current Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-State Resistance Drain-Source On-Voltage SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) VDS(ON) TEST CONDITIONS ID=-0.25mA, VGS=0V VDS=-60V, VGS=0V VGS=+15V, VDS=0V VGS=-15V, VDS=0V -60 VDS=VGS, ID=-250µA VGS=-10V, ID=-15A VGS=-10V, ID=-30A VGS=-10V, ID=-15A, TJ=150°C -1.2 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Total Gate Charge QG VGS=-10V, VDS=-48V, ID=-30A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=-10V, VDD=-30V, Rise Time tR ID=-1A, RG=9.1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=-30A, VGS=0V Body Diode Reverse Recovery Time trr IS=-30A, VGS=0V, dIS/dt=-100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -10 +100 -100 V µA nA nA 0.027 -2.0 -2.4 0.08 -2.9 -2.8 V Ω V V 1320 260 190 2190 730 310 pF pF pF 260 35 5 60 70 535 170 300 80 90 600 190 nC nC nC ns ns ns ns 30 A 105 A -3.0 V ns µC -2.3 175 0.965 3 of 6 QW-R502-622.E UTT30P06 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-622.E UTT30P06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-622.E UTT30P06 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, -ID (A) Drain-Source Diode Forward Current, -ISD (A) Drain Current, -ID (µA) Drain Current, -ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-622.E