DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Jan 26 2001 Sep 21 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO emitter-collector voltage −40 V IC collector current (DC) −5 A ICM peak collector current −10 A RCEsat equivalent on-resistance <80 mΩ • Improved device reliability due to reduced heat generation. APPLICATIONS • Supply line switching circuits PARAMETER PIN • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers) • MOSFET driver applications. DESCRIPTION DESCRIPTION 1 base 2 collector 3 emitter 4 collector 4 handbook, halfpage 2, 4 PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. 1 MARKING PBSS5540Z UNIT PINNING • Battery management applications TYPE NUMBER MAX 3 1 MARKING CODE Top view PB5540 2 3 MAM288 Fig.1 Simplified outline (SOT223) and symbol. 2001 Sep 21 2 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −5 A ICM peak collector current − −10 A IBM peak base current − −2 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.35 W Tamb ≤ 25 °C; note 2 − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE UNIT 92 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2001 Sep 21 3 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −30 V; IE = 0 − − −100 nA VCB = −30 V; IE = 0; Tj = 150 °C − − −50 μA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −2 V; IC = −500 mA 250 350 − VCE = −2 V; IC = −1 A; note 1 200 300 − VCE = −2 V; IC = −2 A; note 1 150 250 − VCE = −2 V; IC = −5 A; note 1 50 150 − IC = −500 mA; IB = −5 mA − −80 −120 mV IC = −1 A; IB = −10 mA − −120 −170 mV VCEsat collector-emitter saturation voltage IC = −2 A; IB = −200 mA − −110 −160 mV RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − <55 <80 mΩ VCEsat collector-emitter saturation voltage IC = −5 A; IB = −500 mA − −250 −375 mV VBEsat base-emitter saturation voltage IC = −5 A; IB = −500 mA − − −1.3 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A − −0.8 −1.25 V fT transition frequency IC = −100 mA; VCE = −10 V; f = 100 MHz 60 120 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 90 105 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2001 Sep 21 4 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z MGU391 1000 MGU393 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) −0.8 (1) 600 (2) 400 (2) 200 (3) −0.4 (3) 0 −1 −10 −102 −103 0 −10−1 −104 IC (mA) −1 VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = −55 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MGU395 −103 handbook, halfpage −10 −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MGU394 −1.2 handbook, halfpage VCEsat (mV) VBEsat (V) −102 −0.8 (1) (2) (1) (2) (3) (3) −10 −1 −10−1 −1 −10 −102 −0.4 0 −10−1 −103 −104 IC (mA) IC/IB = 20. −1 (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Sep 21 5 −10 −102 −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z MGU392 −10 IC (A) handbook, halfpage (1) RCEsat (Ω) (3) (4) (5) (6) −8 MGU396 103 handbook, halfpage (2) 102 (7) (8) −6 10 (9) −4 (1) (10) (2) 1 (3) −2 0 −0.4 0 −0.8 −1.2 10−1 −10−1 −2 −1.6 VCE (V) IB = −150 mA. IB = −135 mA. IB = −120 mA. IB = −105 mA. (5) (6) (7) (8) IB = −90 mA. IB = −75 mA. IB = −60 mA. IB = −45 mA. Collector current as a function of collector-emitter voltage; typical values. 2001 Sep 21 −102 −103 −104 IC (mA) (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (9) IB = −30 mA. (10) IB = −15 mA. Fig.7 Fig.6 −10 IC/IB = 20. Tamb = 25 °C. (1) (2) (3) (4) −1 6 Collector-emitter equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2001 Sep 21 REFERENCES IEC JEDEC EIAJ SC-73 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Sep 21 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp9 Date of release: 2001 Sep 21 Document order number: 9397 750 08434