DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BF723 PNP high-voltage transistor Product specification Supersedes data of 1996 Dec 05 1999 Apr 21 Philips Semiconductors Product specification PNP high-voltage transistor BF723 FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages of colour television receivers 4 handbook, halfpage 2, 4 • General purpose high voltage circuits. 1 DESCRIPTION 3 1 PNP transistor in a SOT223 plastic package. NPN complement: BF722. 2 3 Top view MAM288 PINNING PIN 1 2, 4 3 DESCRIPTION base collector Fig.1 Simplified outline (SOT223) and symbol. emitter LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −250 V VCEO collector-emitter voltage open base − −250 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. 1999 Apr 21 2 Philips Semiconductors Product specification PNP high-voltage transistor BF723 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 106 K/W Rth j-s thermal resistance from junction to soldering point note 1 25 K/W Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. UNIT IE = 0; VCB = −200 V − −10 nA IE = 0; VCB = −200 V; Tj = 150 °C − −10 µA − −50 nA IEBO emitter cut-off current IC = 0; VEB = −5 V hFE DC current gain IC = −25 mA; VCE = −20 V VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −5 mA Cre feedback capacitance IC = ic = 0; VCE = −30 V; f = 1 MHz fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz 60 1999 Apr 21 MAX. 3 −50 − − −0.6 V − 2.5 pF − MHz Philips Semiconductors Product specification PNP high-voltage transistor BF723 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 1999 Apr 21 EUROPEAN PROJECTION 4 Philips Semiconductors Product specification PNP high-voltage transistor BF723 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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