DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High collector current capability: IC and ICM VCEO collector-emitter voltage −50 V IC collector current (DC) −3 A • Higher efficiency leading to less heat generation ICM peak collector current −5 A • Reduced PCB area requirements compared to DPAK. RCEsat equivalent on-resistance <150 mΩ • High collector current gain (hFE) at high IC PARAMETER MAX. UNIT PINNING APPLICATIONS • Power management PIN DESCRIPTION – DC/DC converters 1 base – Supply line switching 2 collector – Battery charger 3 emitter – Linear voltage regulation (LDO). 4 collector • Peripheral drivers – Driver in low supply voltage applications, e.g. lamps, LEDs 4 handbook, halfpage – Inductive load driver, e.g. relays, buzzers, motors. 2, 4 DESCRIPTION 1 PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4350Z. 3 1 Top view MARKING TYPE NUMBER PBSS5350Z 2003 May 13 MARKING CODE Fig.1 PB5350 2 2 3 MAM288 Simplified outline (SOT223) and symbol. NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −60 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −3 A ICM peak collector current − −5 A IBM peak base current − −1 A Ptot total power dissipation Tamb ≤ 25 °C; notes 1 and 3 − 1.35 W Tamb ≤ 25 °C; notes 2 and 3 − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; notes 1 and 3 92 K/W in free air; notes 2 and 3 62.5 K/W Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”. 2003 May 13 3 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector-base cut-off current VCB = −50 V; IE = 0 MAX. UNIT − − −100 nA − − −50 μA − − −100 nA IC = −500 mA 200 − − IC = −1 A; note 1 200 − − IC = −2 A; note 1 emitter-base cut-off current VEB = −5 V; IC = 0 hFE DC current gain VCE = −2 V; collector-emitter saturation voltage TYP. VCB = −50 V; IE = 0; Tj = 150 °C IEBO VCEsat MIN. 100 − − IC = −500 mA; IB = −50 mA − − −100 mV IC = −1 A; IB = −50 mA − − −180 mV IC = −2 A; IB = −200 mA; note 1 − − −300 mV RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − 120 <150 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −200 mA; note 1 − − −1.2 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 − − −1.1 V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 40 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2003 May 13 4 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z MGW167 1000 MGW168 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) −0.8 (1) 600 (2) (2) 400 −0.4 (3) (3) 200 0 −10 −1 −1 −10 −102 0 −10 −1 −103 −104 I C (mA) −1 VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MGW169 −103 handbook, halfpage −10 −102 −103 −104 I C (mA) Base-emitter voltage as a function of collector current; typical values. MGW170 −1.4 handbook, halfpage VBEsat (V) −1.2 VCEsat (mV) −1.0 −102 (1) (1) −0.8 (2) (2) (3) −0.6 −10 (3) −0.4 −1 −10 −1 −1 −10 −102 −0.2 −10 −1 −103 −104 I C (mA) IC/IB = 10. −1 (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 May 13 5 −10 −102 −103 −104 I C (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z MGW171 −1000 handbook, halfpage (3) −800 (1) (2) (3) IC (A) (2) IC (mA) MGW172 −5 (1) handbook, halfpage (4) (5) (6) (7) −4 (4) (8) (5) (9) (6) −600 −3 (7) (10) (8) −400 −2 (9) (10) (11) −200 −1 (12) 0 0 −0.4 0 −0.8 −1.2 −1.6 −2 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) (5) IB = −2.64 mA. (6) IB = −2.31 mA. (7) IB = −1.98 mA. (8) IB = −1.65 mA. (9) IB = −1.32 mA. (10) IB = −0.99 mA. (11) IB = −0.66 mA. (12) IB = −0.33 mA. (1) (2) (3) (4) Collector current as a function of collector-emitter voltage; typical values. RCEsat (Ω) 102 10 1 (1) (2) (3) −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. Fig.8 (2) Tamb = 25 °C. (3) Tamb = −55 °C. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 May 13 IB = −250 mA. IB = −225 mA. IB = −200 mA. IB = −175 mA. Fig.7 MGU390 103 handbook, halfpage 10−1 −10−1 −0.8 −1.2 −1.6 −2 VCE (V) Tamb = 25 °C. IB = −3.96 mA. IB = −3.63 mA. IB = −3.30 mA. IB = −2.97 mA. Fig.6 −0.4 0 6 (5) IB = −150 mA. (6) IB = −125 mA. (7) IB = −100 mA. (8) IB = −75 mA. (9) IB = −50 mA. (10) IB = −25 mA. Collector current as a function of collector-emitter voltage; typical values. NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2003 May 13 REFERENCES IEC JEDEC EIAJ SC-73 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 May 13 Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp9 Date of release: 2003 May 13 Document order number: 9397 750 11058