PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation 1.3 Applications • DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -40 V IC collector current - - -2 A ICM peak collector current - - -3 A RCEsat collector-emitter saturation resistance IC = -1 A; IB = -100 mA; pulsed; - - 310 mΩ repetitive peak collector current tp ≤ 20 ms; δ ≤ 0.33 ; pulsed - - -2.5 A ICRM tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline Graphic symbol C B 3 2 E 1 sym132 SOT89 3. Ordering information Table 3. Ordering information Type number Package PBSS5240X Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS5240X S48 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -40 V VCEO collector-emitter voltage open base - -40 V VEBO emitter-base voltage open collector - -5 V IC collector current - -2 A ICRM repetitive peak collector current δ ≤ 0.33 ; tp ≤ 20 ms; pulsed - -2.5 A ICM peak collector current - -3 A IB base current - -300 mA IBM peak base current - -1 A Ptot total power dissipation [1] - 0.5 W [2] - 0.95 W PBSS5240X Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 2 / 12 PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor Symbol Parameter Conditions [3] Min Max Unit - 1.35 W Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 006aac675 1.5 (1) Ptot (W) (2) 1.0 (3) 0.5 0.0 -75 Fig. 1. -25 25 (1) FR4 PCB, mounting pad for collector 6 cm 2 (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint 2 75 125 175 Tamb (°C) Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) Conditions in free air thermal resistance from junction to solder point PBSS5240X Product data sheet Min Typ Max Unit [1] - - 250 K/W [2] - - 132 K/W [3] - - 93 K/W - - 16 K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 3 / 12 PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor 006aac680 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac681 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 1 0 10- 1 10- 5 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 1 cm Fig. 3. 10- 1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5240X Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 4 / 12 PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor 006aac682 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0.02 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 6 cm Fig. 4. 10- 1 1 102 10 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -40 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -40 V; IE = 0 A; Tj = 150 °C - - -50 µA ICEO collector-emitter cut-off VCE = -30 V; IB = 0 A; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -5 V; IC = -1 mA; Tamb = 25 °C 300 - - VCE = -5 V; IC = -500 mA; Tamb = 25 °C 215 - - VCE = -5 V; IC = -1 A; Tamb = 25 °C 145 - - VCE = -5 V; IC = -2 A; pulsed; 55 - - IC = -100 mA; IB = -5 mA; Tamb = 25 °C - - -140 mV IC = -500 mA; IB = -50 mA; - - -170 mV - - -310 mV - - -630 mV - - 310 mΩ tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCEsat collector-emitter saturation voltage Tamb = 25 °C IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C RCEsat collector-emitter saturation resistance PBSS5240X Product data sheet IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 5 / 12 PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor Symbol Parameter VBEsat VBEon fT Conditions Min Typ Max Unit base-emitter saturation IC = -1 A; IB = -100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - -1.2 V base-emitter turn-on voltage VCE = -5 V; IC = -1 A; pulsed; - - -1.1 V transition frequency VCE = -10 V; IC = -50 mA; f = 100 MHz; 150 - - MHz - - 12 pF tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 006aaa794 800 hFE IB (mA) = - 24 - 21.6 - 19.2 - 16.8 - 14.4 - 12 IC (A) (1) 600 006aaa799 - 2.4 - 1.6 - 9.6 (2) - 7.2 400 - 4.8 - 0.8 (3) - 2.4 200 0 -1 - 10 - 102 - 103 IC (mA) 0 - 104 VCE = -5 V -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 6. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 5. 0 Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values PBSS5240X Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 6 / 12 PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor 006aaa795 - 1.0 006aaa798 - 1.2 VBEsat (V) VBE (V) - 0.8 (1) - 1.0 (2) - 0.8 (1) (2) - 0.6 - 0.6 (3) - 0.4 - 0.2 - 10- 1 Fig. 7. (3) - 0.4 -1 - 10 - 102 - 0.2 - 10- 1 - 103 - 104 IC (mA) -1 - 10 VCE = -5 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values Fig. 8. - 102 - 103 - 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values 006aaa796 -1 VCEsat (V) (1) (2) (3) - 10- 1 - 10- 2 - 10- 1 -1 - 10 - 102 - 103 - 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 9. Collector-emitter saturation voltage as a function of collector current; typical values PBSS5240X Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 7 / 12 PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor 8. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 0.53 0.40 1.5 2 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig. 10. Package outline SOT89 9. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 1.1 (2×) 1.5 solder paste occupied area Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 11. Reflow soldering footprint for SOT89 PBSS5240X Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 8 / 12 PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 12. Wave soldering footprint for SOT89 10. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5240X v.1 20121019 Product data sheet - - PBSS5240X Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 9 / 12 PBSS5240X NXP Semiconductors 40 V, 2 A PNP low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................3 7 Characteristics ....................................................... 5 8 Package outline ..................................................... 8 9 Soldering ................................................................ 8 10 Revision history ..................................................... 9 11 11.1 11.2 11.3 11.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 October 2012 PBSS5240X Product data sheet All information provided in this document is subject to legal disclaimers. 19 October 2012 © NXP B.V. 2012. All rights reserved 12 / 12