Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT50P04
Power MOSFET
-40V, -60A P-CHANNEL
POWER MOSFET

1
DESCRIPTION
TO-252
The UTC UTT50P04 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance, and it can also withstand
high energy in the avalanche.
This UTC UTT50P04 is suitable for motor drivers, high-side switch
and 12V board net, etc.

SOP-8
FEATURES
* RDS(ON) < 0.0105Ω @ VGS=-10V, ID=-30A
* High Switching Speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT50P04L-TN3-R
UTT50P04G-TN3-R
UTT50P04G-S08-R
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-252
SOP-8
1
G
S
Pin Assignment
2 3 4 5 6 7
D S - - S S G D D D
Packing
8
- Tape Reel
D Tape Reel
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UTT50P04

Preliminary
Power MOSFET
MARKING
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SOP-8
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UTT50P04

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-40
V
±20
V
Continuous (Note 2)
-60 (Note 3)
A
Drain Current
-100
A
Pulsed
Continuous Source Current (Diode Conduction)
-60 (Note 3)
A
Avalanche Current
-40
A
Avalanche Energy
80
mJ
TO-252
78
W
Power Dissipation (Note 2)
PD
SOP-8
4.5
W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
ID
IDM
IS
IAR
EAS
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
110
100
1.6
27.8
TO-252
θJA
SOP-8
TO-252
Junction to Case
θJC
SOP-8
Notes: 1. Surface Mounted on 1”x1” FR4 Board.
2. See SOA curve for voltage derating.
3. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50A.
Junction to Ambient (Note 1)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
°C/W
°C/W
°C/W
°C/W
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UTT50P04

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=-40V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
Static Drain-Source On-State Resistance
VGS=-10V, ID=-30A
RDS(ON)
(Note 1)
VGS=−4.5V, ID=−20A
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
Output Capacitance
COSS VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 2)
Total Gate Charge (Note 3)
QG
VGS=-10V, VDS=-20V, ID=-50A
Gate to Source Charge (Note 3)
QGS
Gate to Drain Charge (Note 3)
QGD
Turn-ON Delay Time (Note 3)
tD(ON)
VDD=-20V, VGEN=-10V, ID≈-50A,
Rise Time (Note 3)
tR
Turn-OFF Delay Time (Note 3)
tD(OFF) RL=0.4 Ω , RG=2.5Ω
Fall-Time (Note 3)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C)
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IF=-50A, VGS=0V
(Note 1)
Body Diode Reverse Recovery Time
trr
IF=-50A, dIF/dt=100A/µs
Notes: 1. Pulse test; pulse width≤300µs, duty cycle≤2%.
2. Guaranteed by design, not subject to production testing.
3. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
-1
+100
-100
V
µA
nA
nA
-40
-1.0
-3.0
0.013
0.022
V
Ω
3120
440
320
pF
pF
pF
63
13
16
15
18
60
47
nC
nC
nC
ns
ns
ns
ns
36
-100
A
-1.5
V
ns
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT50P04

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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