STS12NH3LL N-channel 30V - 0.008Ω - 12A - SO-8 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STS12NH3LL 30V <0.0105Ω 12A ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Switching losses reduced ■ Low input capacitance ■ Low threshold device SO-8 Description This series is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It’s therefore ideal for high-density converters in Telecom and Computer applications. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STS12NH3LL S12NH3LL SO-8 Tape & reel March 2006 Rev 6 1/12 www.st.com 12 Contents STS12NH3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STS12NH3LL 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Drain-source voltage (VGS = 0) VDS Value Unit 30 V VGS(1) Gate-source voltage ± 16 V VGS(2) Gate-source voltage ± 18 V ID Drain current (continuous) at TC = 25°C 12 A ID Drain current (continuous) at TC=100°C 7.5 A Drain current (pulsed) 48 A Total dissipation at T C = 25°C 2.5 W -55 to 150 °C Value Unit 50 °C/W IDM (3) PTOT TJ Operating junction temperature Storage temperature Tstg 1. Continuous mode 2. Guaranteed for test time < 15ms 3. Pulse width limited by safe operating area Table 2. Thermal resistance Symbol Rthj-amb (1) Parameter Thermal resistance junction-ambient 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec 3/12 Electrical characteristics 2 STS12NH3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test condictions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±16V VGS(th) Gate threshold voltage VDS= V GS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 6A VGS= 4.5V, ID= 6A Symbol Min. Typ. Max. 30 Unit V VDS = Max rating, IDSS Table 4. VDS = Max rating @125°C 1 10 µA µA ±100 nA 1 V 0.008 0.010 0.0105 0.013 Ω Ω Typ. Max. Unit Dynamic Parameter Test condictions Min. gfs Forward transconductance VDS =10V, ID = 12A 38 S Ciss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 965 285 38 pF pF pF Coss Crss Qg Qgd Total gate charge Gate-source charge Gate-drain charge RG Gate Input Resistance Qgs 4/12 On/off states VDD=15V, ID = 12A VGS =4.5V (see Figure 7) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 0.5 9 3.7 3 12 nC nC nC 1.5 2.5 Ω STS12NH3LL Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test condictions Min. Typ. Max. 15 32 18 8.5 VDD =15V, ID= 6A, RG=4.7Ω, VGS=4.5V (see Figure 13) Unit ns ns ns ns Source drain diode Max Unit Source-drain current 12 A ISDM(1) Source-drain current (pulsed) 48 A VSD(2) Forward on Voltage 1.3 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test condictions Min Typ. ISD=12A, VGS=0 ISD=12A, di/dt = 100A/µs, VDD=20V, Tj=150°C (see Figure 15) 24 17.4 1.45 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STS12NH3LL 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STS12NH3LL Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/12 Test circuit 3 STS12NH3LL Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STS12NH3LL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STS12NH3LL SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS12NH3LL 5 Revision history Revision history Table 7. Revision history Date Revision Changes 22-Jun2004 1 First Release 03-Aug-2004 2 Some value change in Table 1 08-Mar-2005 3 Complete version 17-Mar-2005 4 Ron value change (see Table 3) 23-Jun-2005 5 New Rg value on Table 4 30-Mar-2006 6 New template. 11/12 STS12NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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