DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2001 Jul 13 2004 Jan 09 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage 40 V ICM peak collector current 3 A RCEsat equivalent on-resistance <200 mΩ • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors. PARAMETER MAX. UNIT PINNING PIN APPLICATIONS DESCRIPTION • Supply line switching circuits 1 base • Battery management applications 2 emitter • DC/DC converter applications 3 collector • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). handbook, halfpage 3 3 DESCRIPTION 1 NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T. 1 MARKING Top view 2 2 MAM255 MARKING CODE(1) TYPE NUMBER PBSS4240T Fig.1 Simplified outline (SOT23) and symbol. ZE* Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS4240T 2004 Jan 09 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 2 A ICM peak collector current − 3 A IBM peak base current − 300 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW Tamb ≤ 25 °C; note 2 − 480 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. 2004 Jan 09 3 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − 100 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 50 μA nA collector-base cut-off current IE = 0; VCB = 30 V IEBO emitter-base cut-off current IC = 0; VEB = 4 V − − 100 hFE DC current gain IC = 100 mA; VCE = 2 V 350 470 − IC = 500 mA; VCE = 2 V 300 450 − IC = 1 A; VCE = 2 V 300 420 − IC = 2 A; VCE = 2 V 150 250 − IC = 100 mA; IB = 1 mA − 45 70 mV IC = 500 mA; IB = 50 mA − 70 100 mV IC = 750 mA; IB = 15 mA − 120 180 mV IC = 1 A; IB = 50 mA; note 1 − 130 180 mV IC = 2 A; IB = 200 mA; note 1 − 240 320 mV VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 140 <200 mΩ VBEsat base-emitter saturation voltage IC = 2 A; IB = 200 mA; note 1 − − 1.1 V VBEon base-emitter turn on voltage IC = 100 mA; VCE = 2 V − − 0.75 V Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − 15 20 pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 100 MHz 100 230 − MHz Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Jan 09 4 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 09 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 5 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 09 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp7 Date of release: 2004 Jan 09 Document order number: 9397 750 12435