DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS PARAMETER MAX. UNIT VCEO collector-emitter voltage 40 V ICM peak collector current 2 A RCEsat equivalent on-resistance <500 mΩ PINNING • General purpose switching and muting PIN • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION 1 base 2 emitter 3 collector DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. handbook, halfpage 3 3 MARKING 1 MARKING CODE(1) TYPE NUMBER PBSS4140T 1 ZT* Top view Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 2 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4140T − 2005 Feb 24 DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current − 1 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW Tamb ≤ 25 °C; note 2 − 450 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction in free air; note 1 to ambient in free air; note 2 TYPICAL UNIT 417 K/W 278 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. 2005 Feb 24 3 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector-base cut-off current VCB = 40 V; IE = 0 A − − 100 nA VCB = 40 V; IE = 0 A; Tamb = 150 °C − − 50 μA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A − − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 300 − − VCE = 5 V; IC = 500 mA 300 − 900 VCE = 5 V; IC = 1 A 200 − − IC = 100 mA; IB = 1 mA − − 200 mV IC = 500 mA; IB = 50 mA − − 250 mV ICBO VCEsat collector-emitter saturation voltage IC = 1 A; IB = 100 mA − − 500 mV RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 260 <500 mΩ VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.2 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − − 1.1 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz − − 10 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2005 Feb 24 4 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T MLD660 1000 MLD661 10 handbook, halfpage handbook, halfpage hFE 800 VBE (1) (V) 600 (2) (1) 1 400 (2) (3) (3) 200 0 10−1 1 102 10 10−1 10−1 103 104 IC (mA) 1 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD662 103 handbook, halfpage 10 102 Base-emitter voltage as a function of collector current; typical values. mld663 102 VCEsat 103 104 IC (mA) RCEsat (Ω) (mV) (1) 102 10 (2) (3) 10 (1) 1 (2) (3) 1 1 10 102 103 IC (mA) 10−1 10−1 104 IC/IB = 10. 1 (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2005 Feb 24 5 10 102 103 104 IC (mA) Equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T MLD664 400 handbook, halfpage fT (MHz) 300 200 100 0 0 200 400 600 1000 800 IC (mA) VCE = 10 V. Fig.6 Transition frequency as a function of collector current. 2005 Feb 24 6 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2005 Feb 24 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 7 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2005 Feb 24 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp9 Date of release: 2005 Feb 24 Document order number: 9397 750 14742