AOS Semiconductor Product Reliability Report AOT2610L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOT2610L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOT2610L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOT2610L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Details refer to the datasheet. II. Die / Package Information: AOT2610L Standard sub-micron 60V N channel process Package Type TO220 Lead Frame Bare Cu Die Attach Soft solder Bonding Al & Au wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOT2610L Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@250°c Temp = 150°c , Vgs=100% of Vgsmax - 11 lots 168hrs 500 hrs 1000 hrs 1 lot 3 lots Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 1 lot 3 lots HAST 130°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 100 hrs Pressure Pot 121°c , 29.7psi, RH=100% 96 hrs Temperature Cycle -65°c to 150°c , air to air, 250 / 500 cycles HTGB Lot Attribution Number of Failures Reference Standard 1815pcs 0 JESD22A113 308pcs 0 JESD22A108 77 pcs / lot 308pcs 0 JESD22A108 (Note A*) 5 lots 77 pcs / lot 275pcs 0 JESD22A110 (Note A*) 11 lots 55 pcs / lot 847pcs 0 JESD22A102 (Note A*) 77 pcs / lot 0 JESD22A104 (Note A*) HTRB Total Sample size 9 lots (Note A*) 693pcs 77 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 17349 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOT2610L). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x500+3x2x77x1000) x258] = 7 9 8 MTTF = 10 / FIT = 1.52 x 10 hrs = 17349 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3