AOT2610L/AOTF2610L 60V N-Channel MOSFET General Description Product Summary The AOT2610L & AOTF2610L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 60V 55A / 35A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 10.7mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ 100% UIS Tested 100% Rg Tested Top View TO-220 D TO-220F G AOT2610L G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State 25 9 A A 7 IAS 36 A EAS 65 mJ 75 31 37.5 15.5 2.1 TJ, TSTG RθJA RθJC -55 to 175 AOT2610L 15 60 2.0 www.aosmd.com W W 1.3 Symbol t ≤ 10s V 140 PDSM Junction and Storage Temperature Range Units V 35 39 PD TA=25°C Rev.1.0: March 2013 ±20 IDSM TA=70°C AOTF2610L 60 IDM TA=25°C Continuous Drain Current S 55 ID TC=100°C C D AOT2610L VGS TC=25°C Continuous Drain Current Pulsed Drain Current G AOTF2610L S °C AOTF2610L 15 60 4.8 Units °C/W °C/W °C/W Page 1 of 7 AOT2610L/AOTF2610L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 140 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 nA 2 2.5 V 8.7 10.7 15.7 18.9 10.7 13.5 mΩ S 1 V 35 A A 85 0.72 DYNAMIC PARAMETERS Input Capacitance Ciss Coss V 5 IGSS gFS Units 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz 2007 pF 177 pF 12.5 VGS=0V, VDS=0V, f=1MHz 0.6 mΩ 1.2 pF 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 20.6 30 nC Qg(4.5V) Total Gate Charge 8.5 13 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=30V, ID=20A 5 nC 2.2 nC 8.5 ns VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 3.5 ns 27 ns 3 ns IF=20A, dI/dt=500A/µs 19 ns nC tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 69.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: March 2013 www.aosmd.com Page 2 of 7 AOT2610L/AOTF2610L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4.5V 4V 80 80 60 ID(A) ID (A) 60 3.5V 40 40 125°C 20 20 25°C VGS=3.0V 0 0 1 2 3 4 0 1 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 14 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5 Normalized On-Resistance 2.4 12 RDS(ON) (mΩ Ω) 2 VGS=4.5V 10 8 VGS=10V 2.2 2 VGS=10V ID=20A 1.8 17 5 2 10 =4.5V 1.6 1.4 VGS ID=20A 1.2 1 0.8 6 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 24 1.0E+02 ID=20A 1.0E+01 20 40 1.0E+00 16 IS (A) RDS(ON) (mΩ Ω) 125°C 12 125°C 1.0E-01 1.0E-02 1.0E-03 8 25°C 1.0E-04 25°C 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: March 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT2610L/AOTF2610L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=30V ID=20A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 1600 1200 Coss 800 2 400 Crss 0 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 25 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 500 1000.0 10µs 10µs 100.0 RDS(ON) limited 10.0 100µs 1ms 10ms 1.0 DC TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 400 Power (W) ID (Amps) 10 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 0 100 1000 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT2610L (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area for AOT2610L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=2.0°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2610L (Note F) Rev.1.0: March 2013 www.aosmd.com Page 4 of 7 AOT2610L/AOTF2610L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 1000.0 10µs 100.0 RDS(ON) 400 100µs Power (W) ID (Amps) TJ(Max)=175°C TC=25°C 10.0 1ms 10ms 1.0 DC TJ(Max)=175°C TC=25°C 0.1 300 1.6 2.15 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 17 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case 5 for AOTF2610L (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area for AOTF2610L (Note F) 2 10 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.8°C/W 1 0 18 0.1 PD Single Pulse Ton 0.01 1E-05 T 40 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2610L (Note F) Rev.1.0: March 2013 www.aosmd.com Page 5 of 7 AOT2610L/AOTF2610L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 10 TA=125°C 60 40 20 0 1 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 1000 25 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 1000 60 TA=25°C 50 40 100 Power (W) Current rating ID(A) 175 30 20 10 10 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) 175 1 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: March 2013 www.aosmd.com Page 6 of 7 AOT2610L/AOTF2610L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: March 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7