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Analog Power
AM6930N
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
40 @ VGS = 10V
30
55 @ VGS = 4.5V
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter
applications
ID (A)
5.5
4.8
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
± 20
VGS
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
± 5.5
ID
IDM
± 20
IS
1.3
o
TA=25 C
a
Power Dissipation
o
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
t <= 5 sec
t <= 5 sec
RθJC
RθJA
W
1.3
TJ, Tstg
Symbol
A
2.1
PD
Operating Junction and Storage Temperature Range
A
± 20
o
-55 to 150
Maximum
40
60
C
Units
o
C/W
C/W
o
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
September, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6930_B
Analog Power
AM6930N
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
rDS(on)
1
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 24 V, VGS = 0 V
1
10
uA
o
VDS = 24 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 5.5 A
VGS = 4.5 V, ID = 4.8 A
20
A
40
55
o
VGS = 10 V, ID = 15 A, TJ = 55 C
A
Forward Tranconductance
Diode Forward Voltage
gfs
VSD
VDS = 15 V, ID = 10 A
IS = 2.3 A, VGS = 0 V
mΩ
44
20
0.7
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Ddrain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 5 V, VGS = 5 V, D = 5.5 A
VDD = 15 V, RL = 6 Ω , ID = 1 A,
VGEN = 10 V
IF = 1.7 A, Di/Dt = 100 A/uS
4
1.1
1.4
5
8
17
13
41
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
September, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6930_B
Analog Power
AM6930N
ID, DRAIN CURRENT (A)
50
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
Typical Electrical Characteristics (N-Channel)
VGS = 10V
6.0V
40
4.0V
30
20
3.0V
10
0
0
0.5
1
1.5
2
2
1.7
1.4
4.5V
6.0V
1.1
10V
0.8
0.5
0
VDS, DRAIN-SOURCE VOLTAGE (V)
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
1.6
ID = 10A
RDS(ON), ON-Resistance
(OHM )
Normalized RDS(on)
0.05
VGS = 10V
I D = 10A
1.4
1.2
1.0
0 .8
0 .6
-50
-2 5
0
25
50
75
10 0
12 5
150
0.04
0.03
0.02
o
T A = 25 C
0.01
0
2
T J Juncat ion T emperature (C)
4
6
8
10
VGS, Gate To Source Voltage (V)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
VD=5V
100
-55C
IS, REVERSE DRAIN CURRENT (A)
I D Drain Current (A)
50
25C
40
30
125C
20
10
0
0
1
2
3
4
5
6
VGS = 0V
10
o
TA = 125 C
1
0.1
o
25 C
0.01
0.001
0.0001
VGS Ga te to S o urc e Vo lta ge (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
September, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6930_B
Analog Power
AM6930N
Typical Electrical Characteristics (N-Channel)
Vgs Gate-Source Voltage ( V
10
1600
ID=6.9a
CAPACITANCE (pF)
8
6
4
f = 1MHz
VGS = 0 V
Ciss
1200
800
Coss
400
Crss
2
0
0
0
0
2
4
6
8
10
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, Charge (nC)
Figure 8. Capacitance Characteristics
50
2.4
SINGLE PULSE
RqJA = 125C/W
TA = 25C
VDS = VGS
2.2
P(pk), Peak Transient Power (W)
Vth, Gate-Source Thresthold Voltage
(V)
Figure 7. Gate Charge Characteristics
ID = 250mA
2
1.8
1.6
1.4
1.2
1
-50 -25
0
25
50
75 100 125 150 175
o
TA, AMBIENT TEMPERATURE ( C)
40
30
20
10
0
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 9. Threshold Vs Ambient Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
RqJA(t) = r(t) * RqJA
RqJA = 125 C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4
September, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6930_B
Analog Power
AM6930N
Package Information
SO-8: 8LEAD
H x 45°
5
September, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6930_B