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Analog Power
AM9410N
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
24 @ VGS = 10V
30
33 @ VGS = 4.5V
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter
applications
ID (A)
8.1
6.9
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol
Limit
Units
Parameter
30
Drain-Source Voltage
VDS
V
VGS
±20
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
8.1
ID
IDM
30
IS
2.1
o
TA=25 C
a
Power Dissipation
o
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
Symbol
t <= 10 sec
Steady-State
RθJA
A
3.1
PD
W
2.0
TJ, Tstg
Operating Junction and Storage Temperature Range
A
6.5
o
C
-55 to 150
Maximum
Units
50
o
85
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM9410_C
Analog Power
AM9410N
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
1
VDS = 0 V, VGS = 20 V
±100
VDS = 24 V, VGS = 0 V
1
25
o
VDS = 24 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 8.1 A
VGS = 4.5 V, ID = 6.9 A
VDS = 15 V, ID = 8.1 A
IS = 2.1 A, VGS = 0 V
30
V
nA
uA
A
24
33
20
0.8
mΩ
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall-Time
tf
Source-Ddrain Reverse Recovery Tim trr
VDS = 15 V, VGS = 4.5 V,
ID = 8.1 A
VDD = 25 V, RL = 25 Ω , ID = 1 A,
VGEN = 10 V
IF = 2.1 A, di/dt = 100 A/uS
4.0
1.1
1.4
16
5
23
3
25
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM9410_C
Analog Power
AM9410N
Typical Electrical Characteristics (N-Channel)
30
25
6.0V
20
5.0V
4.0V
15
3.0V
10
5
125oC
20
15
10
5
0
0
0.5
1
1.5
2
0.5
2.5
1.5
2.5
3.5
Figure 2. Body Diode Forward Voltage Variation
Figure 1. On-Region Characteristics
with Source Current and Temperature
1500
CAPACITANCE (pF)
2.5
2
4.5V
1.5
6.0V
1
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
25oC
25
0
10V
f = 1MHz
VGS = 0 V
1200
CISS
900
600
COSS
300
CRSS
0
0.5
0
5
10
15
20
25
0
30
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
1.6
10
VGS = 10V
ID = 7A
I D = 7A
Normalized RDS (on)
Vgs Gate-Source Voltage ( V
TA = -55oC
VDS = 5V
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30
8
6
4
2
1.4
1.2
1.0
0.8
0.6
0
0
2
4
6
8
10
-50
Figure 5. Gate Charge Characteristics
0
25
50
75
100
125
150
Figure 6. On-Resistance Variation with Temperature
3
November, 2003 - Rev. A
PRELIMINARY
-25
TJ Juncation Temperature (C)
Qg, Charge (nC)
Publication Order Number:
DS-AM9410_C
Analog Power
AM9410N
Typical Electrical Characteristics (N-Channel)
RDS(ON), ON-RESISTANCE (OHM)
IS, REVERSE DRAIN CURRENT (A)
100
VGS = 0V
10
o
1
TA = 125 C
o
25 C
0.1
0.01
0.001
0.0001
0.1
ID = 7 A
0.08
0.06
0.04
o
TA = 25 C
0.02
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
Figure 7. Transfer Characteristics
6
50
VDS = VGS
ID = -250mA
2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100 125
8
10
Figure 8. On-Resistance with Gate to Source Voltage
2.2
P(pk), PEAK TRANSIENT POWER (W)
-Vth, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
150 175
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
40
30
20
10
0
0.001
0.01
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
0.1
1
t1, TIME (SEC)
10
100
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
R qJ A(t) = r(t) + R qJ A
R qJ A = 125 癈/W
0.2
0.1
0.1
0.0
P (pk)
0.02
t1
t2
TJ - TA = P * R qJ A(t)
Duty C yc le , D = t1 / t2
0.01
0.01
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIM E (s e c )
Figure 11. Transient Thermal Response Curve
4
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM9410_C
Analog Power
AM9410N
Package Information
SO-8: 8LEAD
H x 45°
5
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM9410_C