UNISONIC TECHNOLOGIES CO., LTD UD4606Z Preliminary Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD4606Z is a dual enhancement mode Power MOSFET using UTC perfect trench technology to provide customers with advanced RDS(ON) and low gate charge. This device has ESD protection function. These complementary MOSFETs can be used to form a level shifted high side switch and for other applications. FEATURES * N-Channel: 30V/6.9A RDS(ON)=22.5mΩ (TYP.) (VGS=10V) RDS(ON)=34.5mΩ ((TYP.) (VGS=4.5V) *P-Channel: -30V/-6A RDS(ON)=28mΩ(TYP.) (VGS=-10V ) RDS(ON)=44mΩ(TYP.) (VGS=-4.5V) * Reliable and rugged * ESD protection SYMBOL (5)(6) D2 (7)(8) D1 (4) G2 (2) G1 S1 N-Channel (1) S2 P-Channel (3) ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UD4606ZL-S08-R UD4606ZG-S08-R www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package SOP-8 Pin Assignment Packing 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel 1 of 6 QW-R502-763.a UD4606Z Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-763.a UD4606Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) N-CHANNEL PARAMETER Drain to Source Voltage Gate to Source Voltage Continuous Drain Current2 Pulsed Drain Current2 Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VDSS VGSS ID IDM PD TJ TSTG RATINGS 30 ±20 6.9 30 2 +150 -55 ~ +150 UNIT V V A A W °C °C P-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS -30 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current2 ID -6 A Pulsed Drain Current2 IDM -30 A Total Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in2 pad area, t≤10sec. THERMAL DATA PARAMETER SYMBOL Junction to Ambient (Note) RθJA Note: Surface Mounted on 1in2 pad area, t≤10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw PATINGS 110 UNIT °C/W 3 of 6 QW-R502-763.a UD4606Z Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance2 SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=24V,VGS=0V VDS=0V ,VGS=±20V 30 VGS(TH) VDS=VGS, ID=250µA VGS=10V,ID=6.9A VGS=4.5V, ID=5A 1 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=15V,VGS=0V,f =1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge2 QG VDS=15V, VGS=10V, ID=6.9A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time2 tD(ON) Turn-ON Rise Time tR VDS=15V, VGS=10V, RG=3Ω, RL=2.2Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Continuous Forward Current3 IS 2 Drain-Source Diode Forward Voltage VSD IS =6.9A, VGS=0V TYP 1.9 22.5 34.5 MAX UNIT 1 ±5 V µA µA 3 28 42 V mΩ mΩ 680 102 77 pF pF pF 13.8 1.82 3.2 4.6 4.1 20.6 5.2 nC nC nC ns ns ns ns 0.76 3 1 A V P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance2 DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge2 Gate-Source Charge Gate-Drain Charge Turn-ON Delay Time2 Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time SYMBOL MIN BVDSS IDSS IGSS VGS=0V, ID=-250µA VDS=-24V,VGS=0V VDS=0V ,VGS=±20V -30 VGS(TH) VDS=VGS, ID=-250µA VGS=-10V,ID=-6A VGS=-4.5V, ID=-5A -1.2 RDS(ON) CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS=-15V,VGS=0V,f =1MHz VDS=-15V,VGS=-10V,ID=-6A VDS=-15V,VGS=-10V,RG=3Ω, RL=2.7Ω TYP -2 28 44 MAX UNIT -1 ±5 V µA μA -2.4 35 58 V mΩ mΩ 920 190 122 pF pF pF 18.5 2.7 4.5 7.7 5.7 20.2 9.5 nC nC nC ns ns ns ns 4 of 6 QW-R502-763.a UD4606Z Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Continuous Forward Current3 IS 2 Drain-Source Diode Forward Voltage VSD IS =-6A, VGS=0V Notes: 1. Pulse width limited by TJ(MAX). 2. Pulse width ≤300μs, duty cycle ≤2%. 3. Surface Mounted on 1in2 pad area, t≤10sec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP -0.76 MAX UNIT -4.2 -1 A V 5 of 6 QW-R502-763.a UD4606Z Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-763.a