ET630 9 Amps， 200Volts N-CHANNEL MOSFET ■ DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ FEATURES * RDS(ON) = 0.4Ω@VGS = 10 V * Ultra low gate charge ( typical 19 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability ■ SYMBOL ■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless PARAMETER SYMBOL PATINGS UNIT Drain-Source Voltage VDSS 200 V VGSS ±20 V 9 A 6.3 A Gate-Source Voltage Drain Currenet Tc=25℃ Continuous Tc=100℃ ID Drain Current Pulsed Repetitive(Note 2) Avalanche Energy Single Pulse(Note 3) Peak Diode Recovery dv/dt(Note 4) Total Power Dissipation otherwise specified) Tc=25℃ IDP 8.0 A EAR 9 mJ EAS 150 mJ dv/dt 3.5 v/ns PD Derate above 25℃ Junction Temperature TJ 1 88 W 51 W/℃ +150 ℃ BEIJING ESTEK ELECTRONICS CO.,LTD ET630 Storage Temperature TSTG ℃ -55~+150 Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged Absolute maximum ratings are stress ratings only and functional device operation is not implied 2.Repetitive Rating:Pulse width limited bu maximum junction temperature ■ THERMAL DATA PARAMETER PACKAGE SYMBOL TO-220 Thermal Resistance Junction-Ambient RATINGS 80 θJA TO-220F 80 TO-220 1.67 Thermal Resistance Junction-Case θJC TO-220F ■ UNIT ℃/W 2.45 ELECTRICAL CHARACTERISTICS（TJ=25℃,unless Otherwise specified.） PARAMETER SYMBOL TEST CONDITIONS BVDSS VGS=0V,ID=250μA MIN TYP MAX UNIT 10 μA VDS=200V,TC=125℃ 100 μA VGS=20V,VDS=0V 100 nA VGS=－20V,VDS=0V －100 nA Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Forward Current Reverse IDSS IGSS △BVDSS/△TJ ID=250μA Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-Resistance RDS(ON) VDS=10V,ID=5A Breakdown Voltage Temperature 200 V VDS=200V,VGS=0V 0.1 V/℃ On Characteristics 2.0 0.25 4.0 V 0.4 Ω Dynamic Characteristics Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS ■ VDS=25V,VGS=0V,f=1MHZ 600 pF 250 pF 80 pF ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT 30 ns 50 ns 50 ns Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tD(ON) tR tD(OFF) tF Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD VDD=100V,ID=9A,RG=9.1Ω 19 VDS=160V,VGS=10V,ID=9A 40 ns 30 nC 10 nC 9 nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS=0V,ISD=9A 2 V Continuous Drain-Source Current ISD 9 A Pulsed Drain-Source Current ISM 36 A Reverse Recovery Time Reverse Recovery Charge t RR ISD=9A,dISD/dt=100A/μs QRR 450 ns 3 μC Note:1.Pulse Test: Pulse Width≤300μs,Duty Cycle≤2% 2.Essentially Independent of Operating Temperature3 2 BEIJING ESTEK ELECTRONICS CO.,LTD ET630 ■ TYPICAL CHARACTERISTICS 3 BEIJING ESTEK ELECTRONICS CO.,LTD ET630 ■ TYPICAL CHARACTERISTICS (Cont.) 4 BEIJING ESTEK ELECTRONICS CO.,LTD ET630 5 BEIJING ESTEK ELECTRONICS CO.,LTD