ETC SWK4606

SWK4606
30V Complementary Enhancement-Mode MOSFET
General Description
Product Summary
● Low gate charge.
N-Channel
P-Channel
● Use as a load switch.
● BVDSS = 30V
● BVDSS = -30V
● Use in PWM applications
● RDS(on) (@VGS= 10V) < 30mΩ
● RDS(on) (@VGS= -10V) < 28mΩ
● RDS(on) (@VGS= 4.5V) < 42mΩ
● RDS(on) (@VGS= -4.5V) < 44mΩ
SOP-8
D1
D1
D2
D2
Pin1
S1
G1
S2
G2
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Symbol
Units
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
6
-6.5
A
4
-4.5
A
24
-28
A
2.5
2.5
W
1.0
1.0
W
-55 ~ +150
-55 ~ +150
ºC
Drain Current (TA=25ºC)
Drain Current (TA=75ºC)
Pulsed Drain Current
a
ID
IDM
Power Dissipation b (TA=25ºC)
b
Power Dissipation (TA=75ºC)
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Characteristics
Parameter
Junction-to-Ambient a (t ≤ 10s)
Junction-to-Ambient
a,d
(Steady-State)
Junction-to-Lead (Steady-State)
SWDS-SWK4606-Rev01
Maximum
Symbol
RθJA
RθJL
1/3
Units
N-Channel
P-Channel
50
60
ºC/W
80
90
ºC/W
25
35
ºC/W
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SWK4606
N-Channel Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V , ID = 250uA
30
V
IDSS
Zero Gate Voltage Drain Current
VDS = 24V , VGS = 0V
1
uA
IGSS
Gate-Body Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
2.5
V
On Characteristics
VGS(th)
RDS(ON))
gFS
Gate Threshold Voltage
VDS = VGS , ID = 250uA
1
Drain-Source
On-State Resistance
VGS = 10V , ID = 6A
30
mΩ
VGS = 4.5V , ID = 5A
42
mΩ
Forward Transconductance
VDS = 10V , ID = 6A
30
S
Drain-Source Diode Characteristics
VSD
IS
Diode Forward Voltage
VGS = 0V , IS = 1.0A
Maximum Body-Diode Continuous Current
1.2
V
2.5
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15V , VGS = 0V
f = 1.0MHz
740
pF
186
pF
82
pF
15
nC
2.5
nC
3.3
nC
11
ns
6
ns
27
ns
12
ns
Switching Characteristics
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
tD(ON)
VDS = 15V , ID = 6A
VGS = 10V
Turn-On Delay Time
tr
Turn-On Rise Time
tD(OFF)
Turn-Off Delay Time
tf
a.
Total Gate Charge
VDD = 15V , ID = 1A
VGS = 10 V
RGEN = 3 ohm
Turn-Off Fall Time
Repetitive rating, Pulse width limited by junction temperature TJ(MAX)=150 ºC. Ratings are based on low frequency and duty cycles to keep initial
TJ=25 ºC
b.
The power dissipation PD is based on TJ(MAX)=150 ºC , using≤10s junction-to-ambient thermal resistance.
c.
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in
any given application depends on the user’s specific board design.
d.
The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
SWDS-SWK4606-Rev01
2/3
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SWK4606
P-Channel Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V , ID = -250uA
-30
V
IDSS
Zero Gate Voltage Drain Current
VDS = -24V , VGS = 0V
-1
uA
IGSS
Gate-Body Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
-2.5
V
On Characteristics
VGS(th)
RDS(ON))
gFS
Gate Threshold Voltage
VDS = VGS , ID = -250uA
-1
Drain-Source
On-State Resistance
VGS = -10V , ID = -6.5A
28
mΩ
VGS = -4.5V , ID = -5.5A
44
mΩ
Forward Transconductance
VDS = -10V , ID = -6.5A
24
S
Drain-Source Diode Characteristics
VSD
IS
Diode Forward Voltage
VGS = 0V , IS = -1.0A
Maximum Body-Diode Continuous Current
-1.2
V
-2.5
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -15V , VGS = 0V
f = 1.0MHz
1490
pF
301
pF
190
pF
26
nC
4
nC
5
nC
10
ns
5.5
ns
26
ns
9
ns
Switching Characteristics
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
tD(ON)
VDS = -15V , ID = -6.5A
VGS = -10V
Turn-On Delay Time
tr
Turn-On Rise Time
tD(OFF)
Turn-Off Delay Time
tf
a.
Total Gate Charge
VDD = -15V , ID = -1A
VGS = -10 V
RGEN = 6 ohm
Turn-Off Fall Time
Repetitive rating, Pulse width limited by junction temperature TJ(MAX)=150 ºC. Ratings are based on low frequency and duty cycles to keep initial
TJ=25 ºC
b.
The power dissipation PD is based on TJ(MAX)=150 ºC , using≤10s junction-to-ambient thermal resistance.
c.
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in
any given application depends on the user’s specific board design.
d.
The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
SWDS-SWK4606-Rev01
3/3
www.siwi-tech.com