SWK4606 30V Complementary Enhancement-Mode MOSFET General Description Product Summary ● Low gate charge. N-Channel P-Channel ● Use as a load switch. ● BVDSS = 30V ● BVDSS = -30V ● Use in PWM applications ● RDS(on) (@VGS= 10V) < 30mΩ ● RDS(on) (@VGS= -10V) < 28mΩ ● RDS(on) (@VGS= 4.5V) < 42mΩ ● RDS(on) (@VGS= -4.5V) < 44mΩ SOP-8 D1 D1 D2 D2 Pin1 S1 G1 S2 G2 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Maximum Symbol Units N-Channel P-Channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 6 -6.5 A 4 -4.5 A 24 -28 A 2.5 2.5 W 1.0 1.0 W -55 ~ +150 -55 ~ +150 ºC Drain Current (TA=25ºC) Drain Current (TA=75ºC) Pulsed Drain Current a ID IDM Power Dissipation b (TA=25ºC) b Power Dissipation (TA=75ºC) Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics Parameter Junction-to-Ambient a (t ≤ 10s) Junction-to-Ambient a,d (Steady-State) Junction-to-Lead (Steady-State) SWDS-SWK4606-Rev01 Maximum Symbol RθJA RθJL 1/3 Units N-Channel P-Channel 50 60 ºC/W 80 90 ºC/W 25 35 ºC/W www.siwi-tech.com SWK4606 N-Channel Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = 250uA 30 V IDSS Zero Gate Voltage Drain Current VDS = 24V , VGS = 0V 1 uA IGSS Gate-Body Leakage Current VGS = ±20V, VDS = 0V ±100 nA 2.5 V On Characteristics VGS(th) RDS(ON)) gFS Gate Threshold Voltage VDS = VGS , ID = 250uA 1 Drain-Source On-State Resistance VGS = 10V , ID = 6A 30 mΩ VGS = 4.5V , ID = 5A 42 mΩ Forward Transconductance VDS = 10V , ID = 6A 30 S Drain-Source Diode Characteristics VSD IS Diode Forward Voltage VGS = 0V , IS = 1.0A Maximum Body-Diode Continuous Current 1.2 V 2.5 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15V , VGS = 0V f = 1.0MHz 740 pF 186 pF 82 pF 15 nC 2.5 nC 3.3 nC 11 ns 6 ns 27 ns 12 ns Switching Characteristics Qg Qgs Gate-Source Charge Qgd Gate-Drain Charge tD(ON) VDS = 15V , ID = 6A VGS = 10V Turn-On Delay Time tr Turn-On Rise Time tD(OFF) Turn-Off Delay Time tf a. Total Gate Charge VDD = 15V , ID = 1A VGS = 10 V RGEN = 3 ohm Turn-Off Fall Time Repetitive rating, Pulse width limited by junction temperature TJ(MAX)=150 ºC. Ratings are based on low frequency and duty cycles to keep initial TJ=25 ºC b. The power dissipation PD is based on TJ(MAX)=150 ºC , using≤10s junction-to-ambient thermal resistance. c. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in any given application depends on the user’s specific board design. d. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. SWDS-SWK4606-Rev01 2/3 www.siwi-tech.com SWK4606 P-Channel Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = -250uA -30 V IDSS Zero Gate Voltage Drain Current VDS = -24V , VGS = 0V -1 uA IGSS Gate-Body Leakage Current VGS = ±20V, VDS = 0V ±100 nA -2.5 V On Characteristics VGS(th) RDS(ON)) gFS Gate Threshold Voltage VDS = VGS , ID = -250uA -1 Drain-Source On-State Resistance VGS = -10V , ID = -6.5A 28 mΩ VGS = -4.5V , ID = -5.5A 44 mΩ Forward Transconductance VDS = -10V , ID = -6.5A 24 S Drain-Source Diode Characteristics VSD IS Diode Forward Voltage VGS = 0V , IS = -1.0A Maximum Body-Diode Continuous Current -1.2 V -2.5 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15V , VGS = 0V f = 1.0MHz 1490 pF 301 pF 190 pF 26 nC 4 nC 5 nC 10 ns 5.5 ns 26 ns 9 ns Switching Characteristics Qg Qgs Gate-Source Charge Qgd Gate-Drain Charge tD(ON) VDS = -15V , ID = -6.5A VGS = -10V Turn-On Delay Time tr Turn-On Rise Time tD(OFF) Turn-Off Delay Time tf a. Total Gate Charge VDD = -15V , ID = -1A VGS = -10 V RGEN = 6 ohm Turn-Off Fall Time Repetitive rating, Pulse width limited by junction temperature TJ(MAX)=150 ºC. Ratings are based on low frequency and duty cycles to keep initial TJ=25 ºC b. The power dissipation PD is based on TJ(MAX)=150 ºC , using≤10s junction-to-ambient thermal resistance. c. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in any given application depends on the user’s specific board design. d. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. SWDS-SWK4606-Rev01 3/3 www.siwi-tech.com