Data Sheet

PBHV9050Z
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
Rev. 1 — 19 August 2010
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„
„
„
„
„
„
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
Medium power SMD plastic package
1.3 Applications
„
„
„
„
„
„
„
Electronic ballasts
LED driver for LED chain module
LCD backlighting
Automotive motor management
Flyback converters
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCESM
collector-emitter peak
voltage
VBE = 0
-
-
−500
V
VCEO
collector-emitter voltage
open base
-
-
−500
V
IC
collector current
-
-
−0.25 A
hFE
DC current gain
80
160
300
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
VCE = −10 V;
IC = −50 mA
[1]
PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
collector
3
emitter
4
collector
Simplified outline
Graphic symbol
4
2, 4
1
1
2
3
3
sym028
3. Ordering information
Table 3.
Ordering information
Type number
PBHV9050Z
Package
Name
Description
Version
SC-73
plastic surface-mounted package with increased
heat sink; 4 leads
SOT223
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBHV9050Z
V9050Z
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
PBHV9050Z
Product data sheet
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−500
V
VCEO
collector-emitter voltage
open base
-
−500
V
VCESM
collector-emitter peak
voltage
VBE = 0
-
−500
V
VEBO
emitter-base voltage
open collector
-
−6
V
IC
collector current
-
−0.25
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
−0.5
A
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
−200
mA
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
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PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
total power dissipation
Tamb ≤ 25 °C
Min
Max
Unit
[1]
-
700
mW
[2]
-
1400
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
006aab155
1600
(1)
Ptot
(mW)
1200
800
(2)
400
0
−75
−25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
PBHV9050Z
Product data sheet
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
thermal resistance from
junction to solder point
Min
Typ
Max
[1]
Unit
-
-
175
K/W
[2]
-
-
90
K/W
-
-
20
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
3 of 13
PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
006aab156
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab157
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
4 of 13
PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −360 V; IE = 0 A
-
-
−100
nA
VCB = −360 V; IE = 0 A;
Tj = 150 °C
-
-
−10
μA
-
-
−100
nA
-
-
−100
nA
ICES
collector-emitter cut-off VCE = −360 V; VBE = 0 V
current
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
hFE
DC current gain
VCE = −10 V
VCEsat
Product data sheet
[1]
100
160
300
IC = −50 mA
[1]
80
160
300
IC = −100 mA
[1]
70
150
-
IC = −20 mA; IB = −2 mA
[1]
-
−115
−200
mV
IC = −50 mA; IB = −10 mA
[1]
-
−95
−200
mV
IC = −100 mA;
IB = −20 mA
[1]
-
−140
−350
mV
[1]
-
−0.75 −0.9
V
-
75
-
ns
-
1600
-
ns
-
1675
-
ns
-
1200
-
ns
VBEsat
base-emitter saturation IC = −50 mA; IB = −10 mA
voltage
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
-
550
-
ns
toff
turn-off time
-
1750
-
ns
fT
transition frequency
VCE = −10 V;
IE = −10 mA; f = 100 MHz
-
50
-
MHz
Cc
collector capacitance
VCB = −20 V; IE = ie = 0 A;
f = 1 MHz
-
6
-
pF
Ce
emitter capacitance
VEB = −0.5 V;
IC = ic = 0 A; f = 1 MHz
-
170
-
pF
[1]
PBHV9050Z
collector-emitter
saturation voltage
IC = −10 mA
VCC = −20 V;
IC = −0.05 A;
IBon = −5 mA;
IBoff = 10 mA
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 13
PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
006aab692
240
IB (mA) = −200
IC
(A)
(1)
hFE
006aab693
−0.5
−180
−0.4
−160
180
−120
(2)
−0.3
−140
−100
−80
120
−60
−40
−0.2
(3)
−20
60
−0.1
0
−10−1
−1
−10
−102
IC (mA)
0.0
−103
0
VCE = −10 V
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4.
DC current gain as a function of collector
current; typical values
006aab694
−1.00
VBE
(V)
Fig 5.
Collector current as a function of
collector-emitter voltage; typical values
006aab695
−1.2
VBEsat
(V)
(1)
−0.75
−0.9
(1)
(2)
(2)
(3)
−0.50
−0.6
−0.25
(3)
−0.3
0.0
−10−1
−1
−10
−102
IC (mA)
0.0
−10−1
−103
VCE = −10 V
−1
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
PBHV9050Z
Product data sheet
−102
IC (mA)
−103
IC/IB = 5
(1) Tamb = −55 °C
Fig 6.
−10
Fig 7.
Base-emitter saturation voltage as a function
of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
6 of 13
PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
006aab696
−1
VCEsat
(V)
006aab697
−1
VCEsat
(V)
(1)
−10−1
(2)
−10−1
(1)
(3)
(2)
(3)
−10−2
−10−1
−1
−10
−102
IC (mA)
−103
−10−2
−10−1
−10
−102
IC (mA)
−103
Tamb = 25 °C
IC/IB = 5
(1) Tamb = 100 °C
(1) IC/IB = 20
(2) Tamb = 25 °C
(2) IC/IB = 10
(3) Tamb = −55 °C
(3) IC/IB = 5
Fig 8.
−1
Collector-emitter saturation voltage as a
function of collector current; typical values
006aab698
104
Fig 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aab699
104
RCEsat
(Ω)
RCEsat
(Ω)
103
103
102
102
(1)
(1)
(2)
(3)
10
10
(2)
1
(3)
1
10−1
−10−1
−1
−10
−102
IC (mA)
−103
10−1
−10−1
(1) Tamb = 100 °C
(1) IC/IB = 20
(2) Tamb = 25 °C
(2) IC/IB = 10
(3) Tamb = −55 °C
(3) IC/IB = 5
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Product data sheet
−10
−102
IC (mA)
−103
Tamb = 25 °C
IC/IB = 5
PBHV9050Z
−1
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
7 of 13
PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
8. Test information
VBB
RB
oscilloscope
VCC
RC
Vo
(probe)
(probe)
450 Ω
oscilloscope
450 Ω
R2
VI
DUT
R1
mgd624
Fig 12. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
3
2.3
4.6
0.8
0.6
Dimensions in mm
0.32
0.22
04-11-10
Fig 13. Package outline SOT223 (SC-73)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBHV9050Z
[1]
PBHV9050Z
Product data sheet
Package
SOT223
Description
8 mm pitch, 12 mm tape and reel
Packing quantity
1000
4000
-115
-135
For further information and the availability of packing methods, see Section 14.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
8 of 13
PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
11. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 14. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
1.9
(3×)
2.7
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig 15. Wave soldering footprint SOT223 (SC-73)
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
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PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBHV9050Z v.1
20100819
Product data sheet
-
-
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
10 of 13
PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
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PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
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PBHV9050Z
NXP Semiconductors
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 19 August 2010
Document identifier: PBHV9050Z