SO T2 23 PBHV3160Z 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 18 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC High collector current gain hFE at high IC AEC-Q101 qualified 3. Applications • • • • • • • Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting HID front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -600 V IC collector current - - -0.1 A hFE DC current gain 70 130 - VCE = -10 V; IC = -10 mA; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline Graphic symbol 2, 4 4 1 1 2 3 SC-73 (SOT223) 3 sym028 6. Ordering information Table 3. Ordering information Type number PBHV3160Z Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 7. Marking Table 4. Marking codes Type number Marking code PBHV3160Z HV316Z PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -600 V VCEO collector-emitter voltage open base - -600 V VCESM collector-emitter peak voltage VBE = 0 V - -600 V VEBO emitter-base voltage open collector - -6 V IC collector current - -0.1 A Ptot total power dissipation [1] - 0.65 W [2] - 1.4 W Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . aaa-013952 1.6 (1) Ptot (W) 1.2 0.8 (2) 0.4 0 -60 20 (1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, standard footprint Fig. 1. 100 Tamb (°C) 180 2 Power derating curves PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - - 190 K/W [2] - - 89 K/W - - 20 K/W thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-013426 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . duty cycle = 1 102 0.75 0.5 0.33 10 0.2 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, tin-plated and standard footprint. Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-013427 102 0.75 Zth(j-a) (K/W) duty cycle = 1 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -400 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -400 V; IE = 0 A; Tj = 150 °C - - -10 µA ICES collector-emitter cut-off VCE = -400 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -10 V; IC = -10 mA; Tamb = 25 °C 70 130 - VCEsat collector-emitter saturation voltage IC = -30 mA; IB = -6 mA; Tamb = 25 °C - -150 -250 mV VBEsat base-emitter saturation IC = -50 mA; IB = -5 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - -950 mV fT transition frequency VCE = -10 V; IC = -5 mA; f = 100 MHz - 38 - MHz Cc collector capacitance VCB = -20 V; IE = 0 A; ie = 0 A; - 6 - pF - 76 - pF f = 1 MHz; Tamb = 25 °C Ce emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C aaa-013915 200 hFE aaa-014275 200 hFE 150 150 (1) (2) 100 100 (1) (3) 50 0 -10-1 Fig. 4. -1 -10 -102 IC (mA) 0 -10-1 -103 -1 hFE = f(IC) (1) Tamb = 100 °C Tamb = 25 °C (2) Tamb = 25 °C (1) VCE = -10 V (3) Tamb = −55 °C (2) VCE = -25 V DC current gain as a function of collector current; typical values (3) VCE = -50 V Product data sheet (3) 50 VCE = −10 V PBHV3160Z (2) Fig. 5. -102 IC (mA) -103 DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 18 August 2014 -10 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor aaa-013916 -0.10 IB = -30 mA IC (A) -27 mA -24 mA -0.08 -0.06 VBE (V) -21 mA -18 mA -15 mA -12 mA aaa-013917 -1.2 (1) -0.8 (2) -9 mA (3) -6 mA -0.04 -0.4 -3 mA -0.02 0 Fig. 6. 0 -1 -2 -3 -4 VCE (V) 0 -10-1 -5 -1 Tamb = 25 °C VCE = −10 V Collector current as a function of collectoremitter voltage; typical values (1) Tamb = −55 °C IC (mA) -103 (3) Tamb = 100 °C aaa-013918 VBEsat (V) -102 (2) Tamb = 25 °C Fig. 7. -1.2 -10 Base-emitter voltage as a function of collector current; typical values aaa-013919 -10 VCEsat (V) -1.0 (1) -1 (2) -0.8 (1) (3) (2) -0.6 (3) -10-1 -0.4 -0.2 -10-1 Fig. 8. -1 -10 -102 IC (mA) -103 -10-2 -10-1 -1 -10 -102 IC (mA) -103 IC/IB = 5 IC/IB = 5 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Base-emitter saturation voltage as a function of Fig. 9. collector current; typical values Collector-emitter saturation voltage as a function of collector current; typical values PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor aaa-013920 -10 aaa-013921 104 RCEsat (Ω) VCEsat (V) 103 -1 (1) 102 (2) (3) (1) (2) (3) 10 -10-1 1 -10-2 -10-1 -1 -10 -102 IC (mA) 10-1 -10-1 -103 -1 -10 -102 IC (mA) -103 IC/IB = 5 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 10.0 (2) Tamb = 25 °C (2) IC/IB = 5.0 (3) Tamb = −55 °C (3) IC/IB = 2.5 Fig. 10. Collector-emitter saturation voltage as a function of collector current; typical values Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values aaa-013922 104 RCEsat (Ω) 103 (1) 102 (2) (3) 10 1 10-1 -10-1 -1 -10 -102 IC (mA) -103 Tamb = 25 °C (1) IC/IB = 10.0 (2) IC/IB = 5.0 (3) IC/IB = 2.5 Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values 11. Test information PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 12. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 e1 3 Lp bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT223 JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig. 13. Package outline SC-73 (SOT223) PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 13. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig. 14. Reflow soldering footprint for SC-73 (SOT223) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 1 2 8.7 Dimensions in mm 3 1.9 (3×) 2.7 occupied area preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig. 15. Wave soldering footprint for SC-73 (SOT223) PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV3160Z v.1 20140818 Product data sheet - - PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 14 PBHV3160Z NXP Semiconductors 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 7 Quality information ............................................... 8 12 Package outline ..................................................... 9 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 August 2014 PBHV3160Z Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 14