Analog Power AM90N08-05P N-Channel 80-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 80 PRODUCT SUMMARY rDS(on) (mΩ) 5.9 @ VGS = 10V ID(A) 90a Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 TA=25°C ID Continuous Drain Current a 90a b IDM Pulsed Drain Current 350 a IS 120 Continuous Source Current (Diode Conduction) a T =25°C P 300 Power Dissipation A D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 0.5 Units V A W °C Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM90N08-05P_1B Analog Power AM90N08-05P Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 64 V, VGS = 0 V VDS = 64 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 45 A VDS = 15 V, ID = 45 A IS = 60 A, VGS = 0 V Dynamic VDS = 40 V, VGS = 4.5 V, ID = 20 A VDS = 40 V, RL = 2 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ Max 1 ±100 1 25 45 5.9 22 0.9 112 23 76 25 56 360 122 10609 989 936 Unit V nA uA A mΩ S V nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM90N08-05P_1B Analog Power AM90N08-05P Typical Electrical Characteristics 100 0.02 80 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.015 4V 0.01 4.5V 0.005 60 40 20 6V,8V,10V 0 0 0 20 40 60 80 ID-Drain Current (A) 0 100 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 100 0.04 TJ = 25°C 0.035 TJ = 25°C ID = 20A IS - Source Current (A) RDS(on) - On-Resistance(Ω) 1 0.03 0.025 0.02 0.015 0.01 10 1 0.1 0.005 0.01 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0.2 10 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 100 25000 F = 1MHz 10V,8V,6V 20000 4.5V Capacitance (pf) ID - Drain Current (A) 80 60 4V 40 20 15000 Ciss 10000 5000 Coss 0 Crss 0 0 0.2 0.4 0.6 0.8 1 1.2 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM90N08-05P_1B Analog Power AM90N08-05P Typical Electrical Characteristics 2.5 VDS = 40V 9 ID = 20A 8 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 100 200 300 -50 -25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 900 10 uS 100 100 uS 1 mS ID Current (A) 25 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit Limited by RDS 800 700 600 500 400 300 200 100 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 62.5 °C /W 0.1 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM90N08-05P_1B Analog Power AM90N08-05P Package Information © Preliminary 5 Publication Order Number: DS_AM90N08-05P_1B