Analog Power AM90P04-03P P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -40 Typical Applications: • Power Routing • High Side Switch • Motor Drives PRODUCT SUMMARY rDS(on) (mΩ) 3.8 @ VGS = -10V 4.7 @ VGS = -4.5V ID (A) -90a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -40 VGS Gate-Source Voltage ±20 TC=25°C ID -90 Continuous Drain Current a IDM Pulsed Drain Current b -390 TC=25°C IS -110 Continuous Source Current (Diode Conduction) a T =25°C P Power Dissipation 300 C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol Maximum RθJA 62.5 RθJC 0.5 Units V A A W °C Units °C/W Notes a. Package limited b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM90P04-03P_1A Analog Power AM90P04-03P Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a Diode Forward Voltage a gfs VSD Test Conditions Static VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±20 V VDS = -32 V, VGS = 0 V VDS = -32 V, VGS = 0 V, TJ = 55°C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -50 A VGS = -4.5 V, ID = -44 A VDS = -15 V, ID = -20 A IS = -55 A, VGS = 0 V Min Typ Max -1 ±100 -1 -25 -120 Unit V nA uA A 3.8 4.7 38 -0.99 mΩ S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = -20 V, VGS = -4.5 V, ID = -20 A VDS = -20 V, RL = 1 Ω, ID = -20 A, VGEN = -10 V, RGEN = 6 Ω VDS = -15 V, VGS = 0 V, f = 1 Mhz 219 57 90 31 51 505 205 17591 1570 1097 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM90P04-03P_1A Analog Power AM90P04-03P Typical Electrical Characteristics 0.015 30 0.01 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 3V 3.5V 0.005 20 10 4V,4.5V,6V,8V,10V 0 0 0 5 10 15 20 0 25 ID-Drain Current (A) 2 3 4 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.03 100 TJ = 25°C ID = -20A 0.025 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 1 0.02 0.015 0.01 10 1 0.1 0.005 0 0.01 0 2 4 6 8 10 0.2 0.6 0.8 1 4. Drain-to-Source Forward Voltage 25 30000 10V,8V,6V, 4.5V,4V F = 1MHz 25000 Capacitance (pf) 20 3.5V 15 3V 10 5 Ciss 20000 15000 10000 5000 0 Coss Crss 0 0 0.05 0.1 0.15 0.2 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage ID - Drain Current (A) 0.4 6. Capacitance 3 Publication Order Number: DS_AM90P04-03P_1A Analog Power AM90P04-03P Typical Electrical Characteristics 2 VDS = -20V ID = -20A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 1.5 1 0.5 0 100 200 300 400 500 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 800 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit Limited by RDS 700 600 500 400 300 200 100 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 62.5 °C /W 0.1 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM90P04-03P_1A Analog Power AM90P04-03P Package Information © Preliminary 5 Publication Order Number: DS_AM90P04-03P_1A