SSE90N04-03P 90A , 40V , RDS(ON) 5 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D C B R T E FEATURES A S Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. G F I H J K L U M X P N APPLICATION O DC-DC converters and power management such as computers, printers, and power supplies . Q V W Q 1 2 3 N-Channel D2 G1 S3 REF. A B C D E F G H I J K L Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37 REF. M N O P Q R S T U V W X Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V ID 90 A IDM 240 A IS 90 A PD 300 W TJ, TSTG -55~175 °C Continuous Drain Current Pulsed Drain Current 1 TC=25°C 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TC=25°C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient 1 RθJA 62.5 RθJC 0.5 °C / W Maximum Junction to Case Notes: 1 Package Limited. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 22-Sep-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSE90N04-03P 90A , 40V , RDS(ON) 5 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250µA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS=20V - - 1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 1 RDS(ON) µA - - 25 120 - - - - 5 VDS=5V, VGS=10V VGS=10V, ID=30A - 7.5 gfs - 30 - S VDS=15V, ID=30A VSD - 1.1 VGS=4.5V, ID=20A - V IS=34A, VGS=0 2 Qg - 4 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 1.4 - Turn-on Delay Time Td(on) - 16 - Tr - 5 - Td(off) - 23 - Tf - 3 - Fall Time A - Total Gate Charge Turn-off Delay Time VDS=32V, VGS=0, TJ=55°C mΩ Dynamic Rise Time VDS=32V, VGS=0 nC VDS=15V, VGS=4.5V, ID=90A nS VDD=25V, VGEN=10V, RL=25Ω, ID=34A Notes: 1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 22-Sep-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSE90N04-03P Elektronische Bauelemente 90A , 40V , RDS(ON) 5 mΩ Ω N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-Sep-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSE90N04-03P Elektronische Bauelemente 90A , 40V , RDS(ON) 5 mΩ Ω N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-Sep-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4