Analog Power AM110N03-03P N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 2.5 @ VGS = 10V 4 @ VGS = 4.5V 110a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 TA=25°C ID 110 Continuous Drain Current a IDM Pulsed Drain Current b 390 a IS 110 Continuous Source Current (Diode Conduction) a T =25°C P 300 Power Dissipation A D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case ID(A) a Symbol Maximum RθJA 62.5 RθJC 0.5 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM110N03-03P_1A Analog Power AM110N03-03P Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 30 A IS = 50 A, VGS = 0 V Dynamic VDS = 15 V, VGS = 4.5 V, ID = 20 A VDS = 15 V, RL = 0.8 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ Max 1 ±100 1 25 200 Unit V nA uA A 2.5 4 30 0.86 65 17 36 18 106 191 108 6813 1166 766 mΩ S V nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM110N03-03P_1A Analog Power AM110N03-03P Typical Electrical Characteristics 100 0.01 80 0.008 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.006 3.5V 4V 0.004 4.5V 6V 60 40 20 0.002 8V,10V 0 0 0 20 40 60 80 ID-Drain Current (A) 0 100 2 3 4 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 100 0.016 TJ = 25°C 0.014 TJ = 25°C ID = 20A IS - Source Current (A) RDS(on) - On-Resistance(Ω) 1 0.012 0.01 0.008 0.006 0.004 10 1 0.1 0.002 0.01 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0.2 10 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 100 10000 80 F = 1MHz 9000 10V,8V 60 Ciss 8000 6V 4.5V 4V Capacitance (pf) ID - Drain Current (A) 0.4 3.5V 40 20 7000 6000 5000 4000 3000 Coss 2000 Crss 1000 0 0 0 0.2 0.4 0.6 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM110N03-03P_1A Analog Power AM110N03-03P Typical Electrical Characteristics 2.5 VDS = 15V 9 ID = 20A 8 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 30 60 90 120 150 -50 -25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 400 10 uS 100 100 uS 1 mS ID Current (A) 25 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC 1 0.1 DC Idm limit Limited by RDS 350 300 250 200 150 100 50 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 62.5 °C /W 0.1 0.05 P(pk) 0.02 t1 t2 0.01 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM110N03-03P_1A Analog Power AM110N03-03P Package Information © Preliminary 5 Publication Order Number: DS_AM110N03-03P_1A