DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PBSS4140U 40 V low VCEsat NPN transistor Product data sheet Supersedes data of 2001 Mar 27 2001 Jul 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capabilities. VCEO collector-emitter voltage 40 V ICM peak collector current 2 A RCEsat equivalent on-resistance <500 mΩ • Improved device reliability due to reduced heat generation. • Enhanced performance over SOT231A general purpose packaged transistors. PARAMETER MAX. UNIT PINNING PIN APPLICATIONS DESCRIPTION • General purpose switching and muting 1 base • LCD backlighting 2 emitter • Supply line switching circuits 3 collector • Battery driven equipment (mobile phones, video cameras and hand-held devices). 3 handbook, halfpage 3 DESCRIPTION NPN low VCEsat transistor in a SOT323 plastic package. PNP complement: PBSS5140U. 1 2 1 MARKING TYPE NUMBER PBSS4140U 2 Top view MARKING CODE 41t Fig.1 MAM062 Simplified outline SOT323 and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current − 1 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tamb ≤ 25 °C; note 2 − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm. 2001 Jul 13 2 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 500 K/W in free air; note 2 357 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 40 V; IC = 0 − − 100 nA VCB = 40 V; IC = 0; Tamb = 150 °C − − 50 μA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 − − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 300 − − VCE = 5 V; IC = 500 mA 300 − 900 VCE = 5 V; IC = 1 A 200 − − IC = 100 mA; IB = 1 mA − − 200 mV IC = 500 mA; IB = 50 mA − − 250 mV IC = 1 A; IB = 100 mA − − 500 mV VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 260 <500 mΩ VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.2 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − − 1.1 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 10 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2001 Jul 13 3 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U MLD660 1000 MLD656 10 handbook, halfpage handbook, halfpage hFE 800 VBE (1) (V) 600 (2) (1) 1 400 (2) (3) (3) 200 0 10−1 1 102 10 10−1 10−1 103 104 IC (mA) 1 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD657 103 handbook, halfpage 10 102 Base-emitter voltage as a function of collector current; typical values. MLD658 102 handbook, halfpage VCEsat 103 104 IC (mA) RCEsat (Ω) (mV) (1) 102 10 (2) (3) (1) 10 (2) 1 (3) 1 1 10 102 103 IC (mA) 10−1 10−1 104 IC/IB = 10. 1 (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Jul 13 4 10 10−2 10−3 10−4 IC (mA) Equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U MLD659 400 handbook, halfpage fT (MHz) 300 200 100 0 0 200 400 600 1000 800 IC (mA) VCE = 10 V. Fig.6 Transition frequency as a function of collector current; typical values. 2001 Jul 13 5 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Jul 13 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Jul 13 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Jul 13 Document order number: 9397 750 08427