Si4178DY Datasheet

New Product
Si4178DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.021 at VGS = 10 V
12a
0.033 at VGS = 4.5 V
6
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
3.7 nC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
SO-8
D
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4178DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
ID
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Unit
V
12a
9.7a
8.3b, c
6.7b, c
40
4.2
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 25
A
2b, c
10
5
5
3.2
PD
mJ
W
2.4b, c
1.5b, c
- 55 to 150
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
42
Maximum
53
19
25
Unit
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
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1
New Product
Si4178DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
25
mV/°C
-6
1.4
2.8
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
20
µA
A
VGS = 10 V, ID = 8.4 A
0.017
0.021
VGS = 4.5 V, ID = 2 A
0.027
0.033
VDS = 15 V, ID = 8.4 A
22
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
405
VDS = 15 V, VGS = 0 V, f = 1 MHz
td(off)
pF
56
VDS = 15 V, VGS = 10 V, ID = 8.4 A
7.5
12
3.7
5.6
1.6
VDS = 15 V, VGS = 4.5 V, ID = 8.4 A
f = 1 MHz
VDD = 15 V, RL = 2.2 Ω
ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω
0.5
2.6
5.2
20
30
15
25
11
20
tf
10
15
td(on)
7
15
10
15
12
20
10
15
tr
td(off)
nC
1.3
td(on)
tr
110
VDD = 15 V, RL = 2.2 Ω
ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω
tf
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
4.2
40
IS = 6.7 A, VGS = 0 V
IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.85
1.2
V
15
30
ns
8
16
nC
8.5
6.5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
New Product
Si4178DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
V GS = 10 V thru 6 V
8
I D - Drain Current (A)
I D - Drain Current (A)
30
V GS = 5 V
20
6
T C = 25 °C
4
10
V GS = 4 V
2
T C = 125 °C
V GS = 3 V
0
0.0
T C = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
V DS - Drain-to-Source Voltage (V)
3
4
5
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.14
600
0.12
500
Ciss
0.10
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
0.08
V GS = 4.5 V
0.06
0.04
400
300
200
Coss
V GS = 10 V
0.02
100
Crss
0
0.00
0
5
10
15
20
25
30
35
0
40
5
10
20
25
30
V DS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
1.6
10
ID = 8.4 A
V DS = 15 V
V GS = 10 V; I D = 8.4 A
1.4
V DS = 7.5 V
6
V DS = 24 V
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
15
1.2
1.0
V GS = 4.5 V; I D = 8.4 A
0.8
2
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
8
0.6
- 50
- 25
0
25
50
75
100
125
150
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si4178DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.050
100
T J = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.045
T J = 25 °C
10
0.040
ID = 2 A; T J = 125 °C
0.035
ID = 8.4 A; T J = 125 °C
0.030
ID = 8.4 A; T J = 25 °C
0.025
0.020
ID = 2 A; T J = 25 °C
0.015
1
0.0
0.010
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
6
8
10
V GS - Gate-to-Source Voltage (V)
V SD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
3.0
30
2.8
25
20
ID = 250 μA
Power (W)
VGS(th) (V)
2.6
2.4
2.2
15
10
2.0
5
1.8
1.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
T J - Temperature (°C)
Single Pulse Power
Threshold Voltage
100
Limited by R DS(on)*
I D - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
TA = 25 °C
Single Pulse
1s
10 s
0.1
DC
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
New Product
Si4178DY
Vishay Siliconix
15
5
12
4
Package Limited
9
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
3
2
1
3
0
0
0
25
50
75
100
T C - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
T C - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
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New Product
Si4178DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65718.
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Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000