New Product Si4164DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 26.5 nC RoHS COMPLIANT APPLICATIONS • DC/DC Conversion - Low-Side Switch • Notebook PC • Gaming SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4164DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Avalanche Energy ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 21.5b, c 17.1b, c 70 5.4 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 30 22.6 A 2.7b, c 40 mJ 80 6.0 3.3 PD 3.0b, c 1.9b, c - 55 to 150 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 33 16 Maximum 42 21 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68870 S-82015-Rev. A, 01-Sep-08 www.vishay.com 1 New Product Si4164DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 27 ID = 250 µA mV/°C - 5.6 VGS(th) VDS = VGS , ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 1.2 30 µA A VGS = 10 V, ID = 15 A 0.0026 0.0032 VGS = 4.5 V, ID = 10 A 0.0032 0.0039 VDS = 15 V, ID = 15 A 75 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 3545 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time nC 7.3 f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 1.1 2.2 35 60 16 30 85 16 30 td(on) 18 35 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 95 40 48 td(off) Turn-Off Delay Time 62 26.5 tf tr Rise Time pF 8.5 VDS = 15 V, VGS = 4.5 V, ID = 10 A td(on) Turn-On Delay Time 650 240 8 16 41 75 8 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 5.4 ISM VSD 70 IS = 3 A 0.72 1.1 A V Body Diode Reverse Recovery Time trr 33 65 ns Body Diode Reverse Recovery Charge Qrr 27 54 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 17 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68870 S-82015-Rev. A, 01-Sep-08 New Product Si4164DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 70 VGS = 10 thru 4 V 8 VGS = 3 V I D - Drain Current (A) I D - Drain Current (A) 56 42 28 6 4 TC = 25 °C 2 14 TC = 125 °C 0.5 1.0 1.5 2.0 0 2.5 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4500 0.0040 3600 VGS = 4.5 V 0.0035 0.0030 VGS = 10 V 900 0.0020 0 28 42 56 Ciss 1800 0.0025 14 5 2700 Coss Crss 0 70 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.8 10 ID = 15 A ID = 10 A 1.6 VDS = 15 V VDS = 10 V 6 VDS = 20 V 4 2 VGS = 10 V 1.4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1 VDS - Drain-to-Source Voltage (V) 0.0045 0 TC = - 55 °C 0 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 1.2 VGS = 4.5 V 1.0 0.8 0 0 13 26 39 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68870 S-82015-Rev. A, 01-Sep-08 52 65 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4164DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.025 100 ID = 15 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.020 0.015 0.010 TJ = 125 °C 0.01 0.005 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 TJ = 25 °C 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 200 0.4 0.2 160 0.0 Power (W) VGS(th) Variance (V) 2 - 0.2 ID = 5 mA 120 80 - 0.4 ID = 250 µA 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 1 10 100 I D - Drain Current (A) Limited by R DS(on)* 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68870 S-82015-Rev. A, 01-Sep-08 New Product Si4164DY Vishay Siliconix 35 7.5 28 6.0 21 4.5 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 14 7 3.0 1.5 0 0.0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot 2.0 Power (W) 1.6 1.2 0.8 0.4 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68870 S-82015-Rev. A, 01-Sep-08 www.vishay.com 5 New Product Si4164DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10-1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68870. www.vishay.com 6 Document Number: 68870 S-82015-Rev. A, 01-Sep-08 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000