UNISONIC TECHNOLOGIES CO., LTD Preliminary 6N40K-TA Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N40K-TA is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching performance and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N40K-TA is generally used in applications , such as electronic lamp ballasts based on half bridge topology and high efficiency switched mode power supplies. FEATURES * RDS(ON)<0.6Ω @ VGS=10V, ID=3A * Fast switching speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 6N40KL-TA3-T 6N40KG-TA3-T TO-220 6N40KL-TF1-T 6N40KG-TF1-T TO-220F1 Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube 6N40KL-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF1: TO-220F1 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-052.a 6N40K-TA Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6 A 6 (Note 5) A Continuous ID Drain Current Pulsed (Note 2) IDM 24(Note 5) A 240 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 8.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 73 Power Dissipation PD W TO-220F1 38 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=13.5mH, IAS=6A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤6A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER Junction to Ambient TO-220/TO-220F1 TO-220 Junction to Case TO-220F1 SYMBOL θJA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 62.5 1.71 3.31 UNIT °C/W °C/W 2 of 6 QW-R205-052.a 6N40K-TA Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS VGS=0V, ID=250µA ID=250μA, Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Referenced to 25°C VDS=400V, VGS=0V Drain-Source Leakage Current IDSS VDS=320V, TJ=125°C Forward VDS=0V ,VGS=+30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, ID=0.5A, RG=25Ω VGS=10V (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =6A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=6A, VR=50V dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 0.54 2.0 V/°C 1 10 +100 -100 µA µA nA nA 4.0 0.6 V Ω 490 95 8.4 pF pF pF 65 6.2 8.8 60 65 105 44 nC nC nC ns ns ns ns 6 24 1.4 300 1.75 A A V ns μC 3 of 6 QW-R205-052.a 6N40K-TA Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R205-052.a 6N40K-TA Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R205-052.a 6N40K-TA Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-052.a