Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5N50-P
Power MOSFET
5A, 500V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 5N50-P is an N-channel power MOSFET adopting
UTC’s advanced technology to provide customers with DMOS,
planar stripe technology. This technology is designed to meet the
requirements of the minimum on-state resistance and perfect
switching performance. It also can withstand high energy pulse in
the avalanche and communication mode.
The UTC 5N50-P can be used in applications, such as active
power factor correction, high efficiency switched mode power
supplies, electronic lamp ballasts based on half bridge topology.

FEATURES
* RDS(ON) < 1.6Ω @ VGS = 10 V, ID = 2.5 A
* 100% avalanche tested
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N50L-TA3-T
5N50G-TA3-T
5N50L-TF3-T
5N50G-TF3-T
5N50L-TF1-T
5N50G-TF1-T
5N50L-TF2-T
5N50G-TF2-T
5N50L-TM3-R
5N50G-TM3-R
5N50L-TMS4-R
5N50G-TMS4-R
5N50L-TN3-R
5N50G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-251S4
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tape Reel
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5N50-P

Power MOSFET
MARKING
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5N50-P

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
5
A
Drain Current
Pulsed (Note 2)
IDM
20
A
Avalanche Current (Note 2)
IAR
5
A
Single Pulsed (Note 3)
EAS
190
mJ
Avalanche Energy
7.3
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
125
W
TO-220F/TO-220F1
38
W
Power Dissipation
PD
TO-220F2
TO-251/TO-251S4
54
W
TO-252
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 15.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-251S4
TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-251S4
TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
UNIT
62.5
°C/W
110
°C/W
1
°C/W
3.25
°C/W
2.13
°C/W
θJA
θJC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
VDS=500V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=400V, TC=125°C
Forward
VGS=30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=50V,
Gate to Source Charge
QGS
ID=1.3A, ID=100μA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A,
Rise Time
tR
R
Turn-OFF Delay Time
tD(OFF)
G=25Ω (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS=5A, VGS=0V
Reverse Recovery Time
trr
IS=5A, VGS=0V,
dIF/dt=100A/µs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
500
V
V/°C
0.5
1
10
100
-100
2.0
1.2
4.0
1.6
580
66
10
18
2.2
9.7
30
80
110
90
263
1.9
µA
nA
nA
V
Ω
pF
pF
pF
24
nC
nC
nC
ns
ns
ns
ns
5
A
20
A
1.4
V
ns
µC
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TEST CIRCUITS AND WAVEFORMS

VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain Current, ID (µA)

Continuous Drain-Source Diode Forward
Current vs. Source to Drain Voltage
7
Drain-Source On-State Resistance
Characteristics
3
Continuous Drain-Source Diode
Forward Current, IS (A)
VGS=10V, ID=2.5A
Drain Current, ID (A)
2.5
2
1.5
1
0.5
0
0
1
2
3
4
Drain to Source Voltage, VDS (V)
5
6
5
4
3
5
1
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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