UNISONIC TECHNOLOGIES CO., LTD 7NM65 Power MOSFET 7.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM65 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 7NM65 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. FEATURES * Low drain-source on-resistance: RDS(ON) < 0.9 Ω (max.) by using Super Junction Structure * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7NM65L-TA3-T 7NM65G-TA3-T 7NM65L-TF3-T 7NM65G-TF3-T 7NM65L-TF1-T 7NM65G-TF1-T 7NM65L-TM3-T 7NM65G-TM3-T 7NM65L-TMS2-T 7NM65G-TMS2-T 7NM65L-TN3-R 7NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-251 TO-251S2 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R205-042.D 7NM65 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-042.D 7NM65 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous ID 7 A Drain Current Pulsed (Note 2) IDM 28 A Avalanche Energy Single Pulsed (Note 3) EAS 60 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns Avalanche Current (Note 2) IAR 2 A TO-220 142 W TO-220F/TO-220F1 48 W Power Dissipation PD TO-251/ TO-251S2 60 W TO-252 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1 Junction to Ambient TO-251/ TO-251S2 TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-251/ TO-251S2 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 62.5 θJA °C/W 110 θJC 0.88 2.6 °C/W 2.08 3 of 7 QW-R205-042.D 7NM65 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS f=1.0 MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, ID=1.3A, IG=100μA Gate-Source Charge QGS VGS=10V (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD=30V, ID=0.5A, Turn-On Rise Time tR R Turn-Off Delay Time tD(OFF) G =25Ω (Note 1, 2) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7 A Body Diode Reverse Recovery Time trr VGS = 0V, IS = 7 A dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr MIN TYP MAX UNIT 650 2.5 1 100 -100 V μA nA nA 4.5 0.9 V Ω 375 238 26 pF pF pF 21 5 5.8 50 95 160 85 nC nC nC ns ns ns ns 300 3 7 A 28 A 1.4 V nS μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R205-042.D 7NM65 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-042.D 7NM65 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VGS RG VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-042.D 7NM65 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-042.D