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Analog Power
AM2324N
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.047 @ VGS = 4.5V
20
0.055@ VGS = 2.5V
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
ID (A)
4.3
4.0
0.087@ VGS = 1.8V
3.2
G
•
•
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings Units
Drain-Source Voltage
VDS
20
V
VGS
Gate-Source Voltage
±8
o
TA=25 C
a
Continuous Drain Current
o
4.3
ID
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
IDM
10
IS
1.6
o
TA=25 C
a
Power Dissipation
o
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
W
0.9
TJ, Tstg -55 to 150
Symbol Maximum
t <= 5 sec
Steady-State
A
1.3
PD
TA=70 C
Operating Junction and Storage Temperature Range
A
3.6
RTHJA
100
166
o
C
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2324_H
Analog Power
AM2324N
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain CurrentA
ID(on)
Drain-Source On-ResistanceA
rDS(on)
Forward TranconductanceA
Diode Forward Voltage
gfs
VSD
0.4
VDS = 0 V, VGS = 8 V
1
uA
VDS = 16 V, VGS = 0 V
0.1
1
uA
VDS = 16 V, VGS = 0 V, TJ = 55o C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1 A
VGS = 2.5 V, ID = 1 A
VGS = 1.8 V, ID = 1 A
VDS = 5 V, ID = 1 A
IS = 1 A, VGS = 0 V
5
A
0.047
0.055
0.087
16
0.6
Ω
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V,
ID = 1 A
VDD = 10 V, RL = 6 Ω , RG = 6 Ω,
VGEN =
4.5 V
6
1
2
8
16
30
14
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM2324_H
nC
ns
Analog Power
AM2324N
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
with Temperature
Gate to Source Voltage
Figure 6. Body Diode Forward Voltage Variation
Figure 5. Transfer Characteristics
with Source Current and Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM2324_H
Analog Power
AM2324N
Typical Electrical Characteristics
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 10. Single Pulse Maximum Power
Figure 9. Maximum Safe Operating Area
Dissipation
Normalized Thermal Transient Junction to Ambient
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM2324_H
Analog Power
AM2324N
Package Information
5
PRELIMINARY
Publication Order Number:
DS-AM2324_H