Analog Power AM2324N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.047 @ VGS = 4.5V 20 0.055@ VGS = 2.5V These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ID (A) 4.3 4.0 0.087@ VGS = 1.8V 3.2 G • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Units Drain-Source Voltage VDS 20 V VGS Gate-Source Voltage ±8 o TA=25 C a Continuous Drain Current o 4.3 ID TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) IDM 10 IS 1.6 o TA=25 C a Power Dissipation o THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient W 0.9 TJ, Tstg -55 to 150 Symbol Maximum t <= 5 sec Steady-State A 1.3 PD TA=70 C Operating Junction and Storage Temperature Range A 3.6 RTHJA 100 166 o C Units o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2324_H Analog Power AM2324N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain CurrentA ID(on) Drain-Source On-ResistanceA rDS(on) Forward TranconductanceA Diode Forward Voltage gfs VSD 0.4 VDS = 0 V, VGS = 8 V 1 uA VDS = 16 V, VGS = 0 V 0.1 1 uA VDS = 16 V, VGS = 0 V, TJ = 55o C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1 A VGS = 2.5 V, ID = 1 A VGS = 1.8 V, ID = 1 A VDS = 5 V, ID = 1 A IS = 1 A, VGS = 0 V 5 A 0.047 0.055 0.087 16 0.6 Ω S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf VDS = 10 V, VGS = 4.5 V, ID = 1 A VDD = 10 V, RL = 6 Ω , RG = 6 Ω, VGEN = 4.5 V 6 1 2 8 16 30 14 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM2324_H nC ns Analog Power AM2324N Typical Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with with Temperature Gate to Source Voltage Figure 6. Body Diode Forward Voltage Variation Figure 5. Transfer Characteristics with Source Current and Temperature 3 PRELIMINARY Publication Order Number: DS-AM2324_H Analog Power AM2324N Typical Electrical Characteristics Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics Figure 10. Single Pulse Maximum Power Figure 9. Maximum Safe Operating Area Dissipation Normalized Thermal Transient Junction to Ambient Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM2324_H Analog Power AM2324N Package Information 5 PRELIMINARY Publication Order Number: DS-AM2324_H