UNISONIC TECHNOLOGIES CO., LTD 60N75 Power MOSFET 60Amps, 75Volts N-CHANNEL POWER MOSTFET DESCRIPTION The UTC 60N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 16mΩ @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 60N75L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Normal Lead Free Plating 60N75-TA3-T 60N75L-TA3-T TO-220 60N75-TF3-T 60N75L-TF3-T TO-220F 60N75-TM3-T 60N75L-TM3-T TO-251 60N75-TN3-R 60N75L-TN3-R TO-252 60N75-TN3-T 60N75L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd. Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube 1 of 8 QW-R502-112.A 60N75 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain to Source Voltage RATINGS UNIT 75 V TC = 25℃ 60 A ID Continuous Drain Current TC = 100℃ 56 A Drain Current Pulsed (Note 1) IDM 300 A ±20 Gate to Source Voltage VGS V Single Pulsed (Note 2) EAS 900 mJ Avalanche Energy 300 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25℃ 220 W Total Power Dissipation PD Derating above 25℃ 1.4 W/℃ Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL θJA θJC MIN TYP MAX 62.5 0.8 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL TEST CONDITIONS BVDSS VGS = 0 V, ID = 250 µA ID = 1mA, △BVDSS/△TJ Referenced to 25℃ VDS = 75 V, VGS = 0 V IDSS VDS = 75 V, VGS = 0 V, TJ = 150℃ VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V VGS(TH) RDS(ON) VDS = VGS, ID = 250 µA VGS = 10 V, ID = 48 A CISS COSS CRSS VGS = 0 V, VDS = 25 V f = 1MHz tD(ON) tR tD(OFF) tF QG QGS QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDD = 38V, ID =48A, VGS=10V (Note 4, 5) VDS = 60V, ID = 48A, VGS = 10 V (Note 4, 5) MIN TYP MAX UNIT 75 V 0.08 2.0 V/℃ 20 µA 250 µA 100 -100 nA nA 4.0 16 V mΩ 3300 530 80 pF pF pF 12 79 80 52 90 20 30 ns ns ns ns nC nC nC 140 35 45 2 of 8 QW-R502-112.A 60N75 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS = 48A, VGS = 0 V Continuous Source Current IS Pulsed Source Current ISM IS = 48A, VGS = 0 V Reverse Recovery Time tRR dIF / dt = 100 A/µs Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, VDD = 50V, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 5. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 90 300 MAX UNIT 1.4 75 300 V A ns µC 3 of 8 QW-R502-112.A 60N75 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-112.A 60N75 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RG 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-112.A 60N75 TYPICAL CHARACTERISTICS Transfer Characteristics 10-1 150℃ 101 Note: 1. VDS=25V 2. 20µs Pulse Test 100 101 100 Drain-Source Voltage, VDS (V) 2 3 4 5 6 7 8 9 10 Gate-Source Voltage, VGS (V) Gate-to-Source Voltage, VGS (V) Reverse Drain Current, ISD (A) Drain-Source On-Resistance, RDS(ON) (mΩ) 100 4.5V 102 25 ℃ 101 Drain Current, ID (A) Drain Current, ID (A) On-State Characteristics VGS Top: 15V 10V 8V 7V 102 6V 5.5V 5V Bottorm: 4.5V Capacitance (pF) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-112.A Drain Current, ID (A) Drain Current , ID (A) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Thermal Response, ZθJC (t) 60N75 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R502-112.A 7 of 8 60N75 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-112.A