UNISONIC TECHNOLOGIES CO., LTD 3N70K-MT Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) <4.0Ω @VGS = 10 V, ID = 1.5 A * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N70KL-TF3-T 3N70KG-TF3-T 3N70KL-TF1-T 3N70KG-TF1-T 3N70KL-TF2-T 3N70KG-TF2-T 3N70KL-TF3T-T 3N70KG-TF3T-T 3N70KL-TM3-T 3N70KG-TM3-T 3N70KL-TN3-R 3N70KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 8 QW-R502-836.F 3N70K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-836.F 3N70K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 90 mJ Avalanche Energy 7.5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 34 Power Dissipation PD W TO-220F2/TO-220F3 35 TO-251/TO-252 50 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 20mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤3.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220F/TO-220F1/ TO-220F2/TO-220F3 Junction to Ambient TO-251/TO-252 TO-220F/TO-220F1 Junction to Case TO-220F2/TO-220F3 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS UNIT 62.5 °C/W 110 3.68 3.58 2.5 °C/W °C/W °C/W °C/W 3 of 8 QW-R502-836.F 3N70K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0 V, ID = 250μA VDS = 700 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 1.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID = 0.5A, Turn-On Rise Time tR RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 50V,ID= 1.3A, Gate-Source Charge QGS VGS= 10 V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 0.6 V 10 μA 100 nA -100 nA V/°С 3.31 4.0 4.0 V Ω 330 510 40 65 5.18 16 pF pF pF 42 26 65 40 13 4.9 3.0 60 50 130 70 16 ns ns ns ns nC nC nC 1.4 V 3.0 A 12 A 2.0 4 of 8 QW-R502-836.F 3N70K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-836.F 3N70K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs Duty Factor≤0.1% Switching Test Circuit 12V tF Switching Waveforms Same Type as D.U.T. 50kΩ 0.2μF tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-836.F 3N70K-MT Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 450 300 400 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 50 0 Drain Current vs. Drain-Source Breakdown Voltage 350 300 250 200 150 100 50 2 3 1 Gate Threshold Voltage, VTH (V) 0 4 0 0 200 400 600 800 Drain-Source Breakdown Voltage, BVDSS(V) Maximum Drain Current vs. Case Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 Case Temperature, TC (°C) 150 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-836.F 3N70K-MT Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-836.F