UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 5.0Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-099.C 2N65-CB Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N65G-AA3-R 2N65L-TA3-T 2N65G-TA3-T 2N65L-TF3-T 2N65G-TF3-T 2N65L-TF1-T 2N65G-TF1-T 2N65L-TF2-T 2N65G-TF2-T 2N65L-TF3T-T 2N65G-TF3T-T 2N65L-TM3-T 2N65G-TM3-T 2N65L-TMS-T 2N65G-TMS-T 2N65L-TMS2-T 2N65G-TMS2-T 2N65L-TMS4-T 2N65G-TMS4-T 2N65L-TN3-R 2N65G-TN3-R 2N65L-TND-R 2N65G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tape Reel Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel MARKING TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SOT-223 2 of 7 QW-R209-099.C 2N65-CB Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 40 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.0 V/ns SOT-223 44 W TO-220 55 W TO-220F/TO-220F1 24 W TO-220F3 PD Power Dissipation TO-220F2 25 W TO-251/TO-251S TO-251S2/TO-251S4 44 W TO-252/TO-252D Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=20mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SOT-223 TO-220/TO-220F TO-220F1/ TO-220F2 Junction to Ambient TO-220F3 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D SOT-223 TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS 150 UNIT °C/W 62.5 °C/W 110 °C/W 14 2.27 °C/W °C/W 5.2 °C/W 5 °C/W 2.84 °C/W θJA θJC 3 of 7 QW-R209-099.C 2N65-CB Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 650 VDS = 650V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS f =1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=1.0V, Gate-Source Charge QGS ID=1.3A (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Body Diode Reverse Recovery Time trr IS=2.0A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.4 V 10 μA 100 nA -100 nA V/°С 4.0 5.0 V Ω 192 32 3.4 pF pF pF 35 3.5 1.8 40 15 62 22 nC nC nC ns ns ns ns 2.0 8.0 1.4 310 0.7 A A V nS nC 4 of 7 QW-R209-099.C 2N65-CB Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-099.C 2N65-CB Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-099.C 2N65-CB Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 50 200 150 100 50 0 0 0 300 0 150 450 600 750 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics Drain-Source Diode Forword Current vs. Source to Drain Voltage 2.4 Drain Current, ID (A) VGS=10V, ID=1A 0.8 0.6 0.4 0.2 0 0 0.7 1.4 2.1 2.8 3.5 4.2 Drain to Source Voltage, VDS (V) Drain-Source Diode Forword Current, ISD (A) 1.2 1.0 0.6 1.2 1.8 2.4 3.0 3.6 Gate Threshold Voltage, VTH (V) 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-099.C