Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N70K
Power MOSFET
4.4A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N70K is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.

FEATURES
* RDS(ON) < 2.8Ω @VGS = 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N70KL-TF3-T
4N70KG-TF3-T
4N70KL-T2Q-T
4N70KG-T2Q-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220F
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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4N70K

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.4
A
4.4
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
17.6
A
120
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F
36
Power Dissipation
PD
W
TO-262
106
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 15mH, IAS = 4 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F
Junction to Case
TO-262
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62.5
3.47
1.18
UNIT
°С/W
°С/W
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4N70K

Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
700
V
VDS = 700 V, VGS = 0 V
10 μA
100
Forward
VGS = 30 V, VDS = 0 V
nA
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2 A
2.0 2.8
Ω
DYNAMIC CHARACTERISTICS
660 760 pF
Input Capacitance
CISS
VDS = 25 V, VGS = 0 V,
Output Capacitance
COSS
48 90 pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
5
11 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
74
ns
Turn-On Rise Time
tR
34
ns
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
174
ns
Turn-Off Fall Time
tF
41
ns
Total Gate Charge
QG
19 25 nC
VDS= 50V, ID= 1.3A,
Gate-Source Charge
QGS
3.4
nC
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
QGD
7.1
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.4 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
4.4
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
17.6 A
Forward Current
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N70K

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Power MOSFET
TYPICAL CHARACTERISTICS
300
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
200
150
100
50
50
0
0
1
4
5
6
2
3
Gate Threshold Voltage, VTH (V)
7
Drain Current, ID (A)
0 200 400 600 800 1000 1200 1400
Drain-Source Breakdown Voltage, BVDSS(V)
Drain Current, ID (A)
0
Drain Current vs.
Gate Threshold Voltage
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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