Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N70K-TA
Power MOSFET
4.0A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N70K-TA is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.

FEATURES
* RDS(ON) < 3.5Ω @ VGS = 10 V, ID = 2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N70KL-TF3-T
4N70KG-TF3-T
4N70KL-TF1-T
4N70KG-TF1-T
4N70KL-TF2-T
4N70KG-TF2-T
4N70KL-TF3T-T
4N70KG-TF3T-T
4N70KL-TM3-T
4N70KG-TM3-T
4N70KL-TMS-T
4N70KG-TMS-T
4N70KL-TN3-R
4N70KG-TN3-R
4N70KL-TND-R
4N70KG-TND-R
4N70KL-T2Q-T
4N70KG-T2Q-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
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4N70K-TA

Power MOSFET
MARKING
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4N70K-TA

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.0
A
Continuous
ID
4.0
A
Drain Current
17.6
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
216
mJ
Avalanche Energy
10.6
mJ
Repetitive (Note 2)
EAR
TO-220F/TO-220F1/
36
W
TO-220F2/TO-220F3
Power Dissipation
PD
TO-251/TO-251S
49
W
TO-252/TO-252D
TO-262
106
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 27mH, IAS = 4 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.0A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220F/TO-220F1/
TO-220F2/TO-220F3
TO-262
Junction to Ambient
TO-251/TO-251S
TO-252/TO-252D
TO-220F/TO-220F1
TO-220F3
TO-220F2
Junction to Case
TO-251/TO-251S
TO-252/TO-252D
TO-262
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
UNIT
62.5
°C/W
110
°C/W
3.47
°C/W
3.28
°C/W
2.55
°C/W
1.18
°C/W
θJA
θJC
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4N70K-TA
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MIN TYP MAX UNIT
VGS = 0 V, ID = 250 μA
700
VDS = 700 V, VGS = 0 V
Forward
VGS = 30 V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA, Referenced to 25°C
0.6
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2 A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
660
VDS = 25 V, VGS = 0 V,
Output Capacitance
COSS
48
f = 1MHz
5
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
45
VDD = 30V, ID = 0.5A,
Turn-On Rise Time
tR
32
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
80
Turn-Off Fall Time
tF
24
Total Gate Charge
QG
37
VDS= 50V, ID= 1.3A,
Gate-Source Charge
QGS
4.8
VGS= 10 V (Note 1, 2)
6.0
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.0 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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V
μA
10
100
nA
-100
V/°С
4.0
3.5
V
Ω
760
90
11
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.4
V
4.0
A
17.6
A
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
300
250
Drain Current, ID (µA)
250
Drain Current, ID (µA)
Drain Current vs.
Gate Threshold Voltage
200
150
100
200
150
100
50
50
0
0
0
200 400 600 800 1000 1200 1400
0
Drain-Source Breakdown Voltage, BVDSS(V)
6
VGS=10V
ID=2.2A
7
Continuous Drain-Source Diode
Forward Current vs.
Source to Drain Voltage
Drain-Source On-State Resistance
Characteristics
2.5
1
4
5
6
2
3
Gate Threshold Voltage, VTH (V)
5
2.0
4
1.5
3
1.0
2
0.5
0
0
1
2
4
6
8
Drain to Source Voltage, VDS (V)
0
0
200 400 600 800 1000 1200 1400
Source to Drain Voltage, VSD (mV)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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