KSMN6690/FDS6690A KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 30V RDSON ID 12.5MΩ 11A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 11 Continuous Drain Current-T=100℃ 50 Pulsed Drain Current2 2.5 EAS Single Pulse Avalanche Energy3 96 PD Power Dissipation4 2.5 TJ, TSTG Operating and Storage Junction Temperature -55 to Range +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMN6690/FDS6690A KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 50 RƟJA Thermal Resistance, Junction to Ambient1 25 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMN6690 KSMN6690 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 1 1.9 3 V VDS=10V,ID=6A — 9.8 12.5 VDS=2.5V,ID=5A — 13.7 22.0 VDS=5V,ID=12A — 48 — — 1205 — — 290 — — 115 — — 9 19 — 5 10 — 28 44 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 9 19 Qg Total Gate Charge — 12 16 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 3.4 — Qgd Gate-Drain “Miller” Charge ID=6A — 4.0 — ns ns ns ns nC nC nC — 0.74 1.2 V — — — ns — — — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMN6690/FDS6690A KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics. unless otherwise noted Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. www.kersemi.com 3 KSMN6690/FDS6690A KERSMI ELECTRONIC CO.,LTD. 30V Figure 5. Transfer Characteristics. N-channel MOSFET Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 7. Gate Charge Characteristics. Area. Figure 8. Maximum Safe Operating Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4