KSMN4498 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Description This N-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS RDSON ID 30V 5.5MΩ 18A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 18 Continuous Drain Current-T=100℃ 14 Pulsed Drain Current2 140 EAS Single Pulse Avalanche Energy3 88 PD Power Dissipation4 3.1 TJ, TSTG Operating and Storage Junction Temperature -55 to ID Range 150 A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMN4498 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 40 RƟJA Thermal Resistance, Junction to Ambient1 24 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMN4498 KSMN4498 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 36.5 — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — 100 v μA nA VDS=VDS, ID=250μA 1.3 1.8 2.5 V VDS=10V,ID=6A — 4.6 5.5 VDS=2.5V,ID=5A — 6.6 8 VDS=5V,ID=12A — 53 — — 1910 2300 — 316 — — 227 — — 8.1 — — 8.6 — — 29 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time — 8 — Qg Total Gate Charge — 37 44.5 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 18 — Gate-Drain “Miller” Charge ID=6A — 4.8 — ns ns ns ns nC nC nC — 0.7 1 V — 14 17 ns — 40 — nC Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/S www.kersemi.com 2 KSMN4498 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage unless otherwise noted Figure 2. Transfer Characteristics Figure 4: On-Resistance vs. Junction Temperature www.kersemi.com 3 KSMN4498 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Figure 7: Gate-Charge Characteristics Figure 8.Maximum Safe Operating Area Figure 9: Normalized Maximum Transient Thermal Impedance www.kersemi.com 4