UNISONIC TECHNOLOGIES CO., LTD UFZ34 Preliminary Power MOSFET 28A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFZ34 is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge. The UTC UFZ34 is suitable for all commercial-industrial applications, etc. FEATURES * RDS(ON)<0.042Ω @VGS=10V, ID=17A * High switching speed * Low gate charge SYMBOL D (2) G (1) S (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free UFZ34L-TA3-T UFZ34G-TA3-T UFZ34L-TM3-T UFZ34G-TM3-T UFZ34L-TN3-R UFZ34G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-251 TO-252 1 G G G Pin Assignment 2 3 D S D S D S Packing Tube Tube Tape Reel 1 of 6 QW-R502-900.a UFZ34 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 60 V ±20 V 28 A TC=25°C ID Continuous Drain Current TC=100°C 20 A Pulsed (Note 1) IDM 112 A Avalanche Current (Note 1) IAR 17 A 97 mJ Single Pulsed (Note 2) EAS Avalanche Energy Repetitive (Note 1) EAR 6.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.0 V/ns Power Dissipation TC=25°C PD 68 W Linear Derating Factor 0.46 W/°C Junction Temperature TJ -55~+175 °C Storage Temperature Range TSTG -55~+175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER SYMBOL RATING Junction to Ambient θJA 62 Junction to Case θJC 3.3 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L=670µH, IAS=17A, RG=25Ω, Starting TJ=25°C. 3. ISD≤17A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ≤175°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W 2 of 6 VER.a UFZ34 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 60 Drain-Source Leakage Current IDSS VDS=60V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=17A (Note 2) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=48V, ID=17A Gate to Source Charge QGS (Note 4) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=17A, RG=13Ω, RD=1.8Ω (Note 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Maximum Body-Diode Pulsed Current ISM (Note 1) Drain-Source Diode Forward Voltage VSD TJ=25°C, IS=17A, VGS=0V (Note 2) Body Diode Reverse Recovery Time tRR TJ=25°C, IF=17A, Body Diode Reverse Recovery Charge di/dt=100A/µs QRR (Note 2) Intrinsic turn-on time is negligible Forward Turn-On Time tON (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse width≤300µs, Duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 25 +100 -100 V µA nA nA 4.0 V 0.042 Ω 680 220 80 pF pF pF 30 6.7 12 nC nC nC ns ns ns ns 28 A 100 A 1.3 V 63 95 ns 130 200 nC 5.1 30 22 30 3 of 6 QW-R502-900-.a UFZ34 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-900-.a UFZ34 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-900-.a UFZ34 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-900-.a