IRF IRHNJ67130

PD-95816A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
IRHNJ67130
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ67130 100K Rads (Si)
IRHNJ63130 300K Rads (Si)
RDS(on)
0.042Ω
0.042Ω
ID
22A*
22A*
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
22*
19
88
75
0.6
±20
73
22
7.5
3.8
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
1.0 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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1
02/18/05
IRHNJ67130
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
—
0.11
—
V/°C
—
—
0.042
Ω
2.0
14
—
—
—
—
—
—
4.0
—
10
25
V
S( )
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
35
13
14
20
38
35
15
—
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1730
340
6.0
1.03
—
—
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 19A
Ã
Ω
BVDSS
Parameter
nA
nC
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 19A Ã
VDS = 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 22A
VDS = 50V
VDD = 50V, ID = 22A,
VGS = 12V, RG = 7.5Ω
ns
nH
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
22*
88
1.2
355
3.0
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 22A, VGS = 0V Ã
Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.67
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ67130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Up to 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Sourcee „
On-State Resistance (SMD-0.5)
„
Diode Forward Voltage
Test Conditions ˆ
Min
Max
100
2.0
—
—
—
—
4.0
100
-100
10
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 120V, VGS= 0V
—
0.045
Ω
VGS = 12V, ID = 12A
—
0.042
Ω
VGS = 12V, ID = 12A
—
1.2
V
VGS = 0V, ID = 19A
V
nA
1. Part numbers IRHNJ67130, IRHNJ63130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
(MeV/(mg/cm2))
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
-5V
-10V
-15V
-17V
-19V
-20V
37.46
278.5
36.03
100
100
100
100
100
100
40
I
59.72
320
30.97
100
100
100
30
-
-
-
Au
81.44
333
27.53
100
100
-
-
-
-
-
VDS
Br
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ67130
Pre-Irradiation
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.0V
BOTTOM 4.5V
10
1
0.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
0.01
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
4.5V
1
0.1
1
10
100
1000
0.1
VDS , Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
2.5
T J = 150°C
T J = 25°C
1
VDS = 50V
15
60µs PULSE WIDTH
0.1
4
5
6
7
8
9
10
100
1000.0
Fig 2. Typical Output Characteristics
100
10
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
60µs PULSE WIDTH
Tj = 150°C
ID = 22A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2400
2000
Ciss
1600
Coss
1200
800
400
0
Crss
1
10
20
16
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
5
10
15
20
25
30
35
40
Q G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
T J = 150°C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
VDS = 80V
VDS = 50V
ID = 22A
VGS , Gate-to-Source Voltage (V)
2800
IRHNJ67130
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 25°C
10
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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10
1ms
1
0.1
1.4
100µs
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1.0
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ67130
Pre-Irradiation
30
LIMITED BY PACKAGE
VGS
25
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
+
-V DD
20
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
VDS
5
90%
0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ67130
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
120
TOP
100
BOTTOM
ID
10A
14A
22A
80
60
40
20
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ67130
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 0.3 mH
Peak IL = 22A, VGS = 12V
 ISD ≤ 22A, di/dt ≤ 420A/µs,
VDD ≤ 100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2005
8
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