DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BSR40; BSR41; BSR42; BSR43 NPN medium power transistors Product data sheet Supersedes data of 1999 Apr 28 2004 Dec 13 NXP Semiconductors Product data sheet BSR40; BSR41; BSR42; BSR43 NPN medium power transistors FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Thick and thin-film circuits • Telephony and general industrial applications. DESCRIPTION 2 NPN medium power transistor in a SOT89 plastic package. PNP complements: BSR30; BSR31 and BSR33. 3 MARKING TYPE NUMBER 3 MARKING CODE TYPE NUMBER MARKING CODE BSR40 AR1 BSR42 AR3 BSR41 AR2 BSR43 AR4 2 1 1 sym042 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER BSR40 BSR41 NAME DESCRIPTION VERSION SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 BSR42 BSR43 2004 Dec 13 2 NXP Semiconductors Product data sheet BSR40; BSR41; BSR42; BSR43 NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter − 70 V − 90 V BSR40; BSR41 − 60 V BSR42; BSR43 − 80 V BSR40; BSR41 BSR42; BSR43 VCEO MIN. collector-emitter voltage open base VEBO emitter-base voltage − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current − 0.2 A Ptot total power dissipation − 1.35 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-a) thermal resistance from junction to ambient Rth(j-s) thermal resistance from junction to soldering point note 1 VALUE UNIT 93 K/W 13 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Dec 13 3 NXP Semiconductors Product data sheet BSR40; BSR41; BSR42; BSR43 NPN medium power transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0 A; VCB = 60 V − 100 nA IE = 0 A; VCB = 60 V; Tj = 150 °C − 50 μA − 100 nA BSR40; BSR42 10 − BSR41; BSR43 30 − BSR40; BSR42 40 120 BSR41; BSR43 100 300 BSR40; BSR42 30 − BSR41; BSR43 50 − IC = 150 mA; IB = 15 mA; note 1 − 250 mV IC = 500 mA; IB = 50 mA; note 1 − 500 mV IC = 150 mA; IB = 15 mA; note 1 − 1 V IC = 500 mA; IB = 50 mA; note 1 − 1.2 V collector-base cut-off current IEBO emitter-base cut-off current IC = 0 A; VEB = 5 V hFE DC current gain IC = 100 μA; VCE = 5 V; note 1 DC current gain DC current gain VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = 100 mA; VCE = 5 V; note 1 IC = 500 mA; VCE = 5 V; note 1 Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz − 12 pF Ce emitter capacitance IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz − 90 pF fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 100 − MHz ICon = 100 mA; IBon = 5 mA; IBoff = −5 mA − 250 ns − 1 μs Switching times (between 10% and 90% levels) ton turn-on time toff turn-off time Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.01. 2004 Dec 13 4 NXP Semiconductors Product data sheet BSR40; BSR41; BSR42; BSR43 NPN medium power transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Dec 13 REFERENCES IEC JEDEC JEITA TO-243 SC-62 5 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet BSR40; BSR41; BSR42; BSR43 NPN medium power transistors DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Dec 13 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp7 Date of release: 2004 Dec 13 Document order number: 9397 750 13874