PHILIPS BSR30

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BSR30; BSR31; BSR33
PNP medium power transistors
Product data sheet
Supersedes data of 1999 Apr 26
2004 Dec 13
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSR30; BSR31; BSR33
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
collector
3
base
• Telephony and general industrial applications
• Thick and thin-film circuits.
2
DESCRIPTION
PNP medium power transistor in a SOT89 plastic package.
NPN complements: BSR40; BSR41 and BSR43.
3
1
MARKING
3
TYPE NUMBER
2
1
sym079
MARKING CODE
BSR30
BR1
BSR31
BR2
BSR33
BR4
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
BSR30
BSR31
NAME
DESCRIPTION
VERSION
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
BSR33
2004 Dec 13
2
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSR30; BSR31; BSR33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
−70
V
−
−90
V
BSR30; BSR31
−
−60
V
BSR33
−
−80
V
BSR30; BSR31
BSR33
VCEO
MIN.
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−2
A
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
1.35
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-s)
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
93
K/W
13
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 13
3
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSR30; BSR31; BSR33
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0 A; VCB = −60 V
−
−100
nA
IE = 0 A; VCB = −60 V; Tj = 150 °C
−
−50
μA
−
−100
nA
BSR30
10
−
BSR31; BSR33
30
−
BSR30
40
120
BSR31; BSR33
100
300
BSR30
30
−
BSR31; BSR33
50
−
collector-base cut-off current
IEBO
emitter-base cut-off current
IC = 0 A; VEB = −5 V
hFE
DC current gain
IC = −100 μA; VCE = −5 V; note 1
DC current gain
DC current gain
IC = −100 mA; VCE = −5 V; note 1
IC = −500 mA; VCE = −5 V; note 1
VCEsat
collector-emitter saturation
voltage
IC = −150 mA; IB = −15 mA; note 1
−
−0.25
V
IC = −500 mA; IB = −50 mA; note 1
−
−0.5
V
VBEsat
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA; note 1
−
−1
V
IC = −500 mA; IB = −50 mA; note 1
−
−1.2
V
IC = −50 mA; VCE = −10 V;
f = 100 MHz
100
−
MHz
fT
transition frequency
Note
1. Pulse test: tp = 300 μs; δ < 0.01.
2004 Dec 13
4
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSR30; BSR31; BSR33
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Dec 13
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
5
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
PNP medium power transistors
BSR30; BSR31; BSR33
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 13
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/04/pp7
Date of release: 2004 Dec 13
Document order number: 9397 750 13873