DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSR40; BSR41; BSR42; BSR43 NPN medium power transistors Product specification Supersedes data of 1997 Apr 07 1999 Apr 28 Philips Semiconductors Product specification NPN medium power transistors BSR40; BSR41; BSR42; BSR43 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Thick and thin-film circuits • Telephony and general industrial applications. handbook, halfpage 2 DESCRIPTION 3 NPN medium power transistor in a SOT89 plastic package. PNP complements: BSR30; BSR3 and BSR33. 1 MARKING 1 TYPE NUMBER MARKING CODE TYPE NUMBER AR1 BSR42 AR3 BSR41 AR2 BSR43 AR4 3 Bottom view MARKING CODE BSR40 2 MAM296 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BSR40; BSR41 − 70 V BSR42; BSR43 − 90 V BSR40; BSR41 − 60 V BSR42; BSR43 − 80 V collector-emitter voltage open base VEBO emitter-base voltage − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current Ptot total power dissipation Tstg open collector − 0.2 A − 1.35 W storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 1999 Apr 28 2 Philips Semiconductors Product specification NPN medium power transistors BSR40; BSR41; BSR42; BSR43 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE note 1 UNIT 93 K/W 13 K/W Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 60 V − 100 nA IE = 0; VCB = 60 V; Tj = 150 °C − 50 µA − 100 nA BSR40; BSR42 10 − BSR41; BSR43 30 − BSR40; BSR42 40 120 BSR41; BSR43 100 300 BSR40; BSR42 30 − BSR41; BSR43 50 − IC = 150 mA; IB = 15 mA; note 1 − 250 IC = 500 mA; IB = 50 mA; note 1 − 500 mV IC = 150 mA; IB = 15 mA; note 1 − 1 V IC = 500 mA; IB = 50 mA; note 1 − 1.2 V collector cut-off current IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 100 µA; VCE = 5 V; note 1 DC current gain DC current gain VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = 100 mA; VCE = 5 V; note 1 IC = 500 mA; VCE = 5 V; note 1 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 12 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 90 pF fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 100 − MHz ICon = 100 mA; IBon = 5 mA; IBoff = −5 mA − 250 ns − 1 µs Switching times (between 10% and 90% levels) ton turn-on time toff turn-off time Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. 1999 Apr 28 3 Philips Semiconductors Product specification NPN medium power transistors BSR40; BSR41; BSR42; BSR43 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 1999 Apr 28 EUROPEAN PROJECTION ISSUE DATE 97-02-28 4 Philips Semiconductors Product specification NPN medium power transistors BSR40; BSR41; BSR42; BSR43 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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