PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 — 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906M. 1.2 Features n Single general-purpose switching transistor n Board-space reduction n Ultra small SMD plastic package 1.3 Applications n General-purpose switching and amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 40 V IC collector current - - 200 mA hFE DC current gain 100 180 300 VCE = 1 V; IC = 10 mA 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 base 2 emitter 1 3 collector 2 Graphic symbol 3 3 1 Transparent top view 2 sym021 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 3. Ordering information Table 3. Ordering information Type number PMBT3904M Package Name Description Version SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 4. Marking Table 4. Marking codes Type number Marking code PMBT3904M 6P 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current - 200 mA ICM peak collector current single pulse; tp ≤ 1 ms - 200 mA IBM peak base current single pulse; tp ≤ 1 ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1][2] - 260 mW [1][3] - 590 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Reflow soldering is the only recommended soldering method. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. PMBT3904M_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 2 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 006aab602 800 Ptot (mW) (1) 600 400 (2) 200 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves SOT883 (SC-101) 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Typ Max Unit - - 481 K/W [1][3] - - 212 K/W [1] Reflow soldering is the only recommended soldering method. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. PMBT3904M_1 Product data sheet Min [1][2] © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 3 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 006aab603 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit ICBO collector-base cut-off VCB = 30 V; IE = 0 A current Conditions - - 50 nA IEBO emitter-base cut-off current VEB = 6 V; IC = 0 A - - 50 nA hFE DC current gain VCE = 1 V IC = 0.1 mA 60 180 - IC = 1 mA 80 180 - IC = 10 mA 100 180 300 IC = 50 mA 60 105 - IC = 100 mA 30 50 - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA - 75 200 mV IC = 50 mA; IB = 5 mA - 120 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 750 850 mV IC = 50 mA; IB = 5 mA - 850 950 mV td delay time VCC = 3 V; IC = 10 mA; IBon = 1 mA; IBoff = −1 mA - - 35 ns tr rise time ton turn-on time - - 35 ns - - 70 ns ts storage time - - 200 ns tf fall time - - 50 ns toff turn-off time - - 250 ns Cc collector capacitance VCB = 5 V; IE = ie = 0 A; f = 1 MHz - - 4 pF PMBT3904M_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 4 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Ce emitter capacitance VEB = 500 mV; IC = ic = 0 A; f = 1 MHz - - 8 pF fT transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz 300 - - MHz NF noise figure VCE = 5 V; IC = 100 µA; RS = 1 kΩ; f = 10 Hz to 15.7 kHz - - 5 dB 006aab115 600 006aab116 0.20 IB (mA) = 5.0 4.5 4.0 3.5 3.0 2.5 IC (A) hFE 0.15 400 2.0 (1) 1.5 1.0 0.10 0.5 (2) 200 0.05 (3) 0 10−1 1 10 102 0.0 103 0 2 IC (mA) 4 6 8 10 VCE (V) Tamb = 25 °C VCE = 1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. DC current gain as a function of collector current; typical values Fig 4. Collector current as a function of collector-emitter voltage; typical values PMBT3904M_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 5 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 006aab117 1.2 006aab118 1.3 VBE (V) VBEsat (V) (1) 0.8 (1) 0.9 (2) (2) (3) 0.4 (3) 0.5 0 10−1 1 10 102 0.1 10−1 103 1 10 VCE = 1 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig 5. 102 103 IC (mA) IC (mA) Base-emitter voltage as a function of collector current; typical values Fig 6. Base-emitter saturation voltage as a function of collector current; typical values 006aab119 1 VCEsat (V) 10−1 (1) (2) (3) 10−2 10−1 1 10 102 103 IC (mA) IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values PMBT3904M_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 6 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 Ω 450 Ω oscilloscope R2 VI DUT R1 mlb826 VI = 5 V; t = 600 µs; tp = 10 µs; tr = tf ≤ 3 ns R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω VBB = −1.9 V; VCC = 3 V Oscilloscope: input impedance Zi = 50 Ω Fig 8. Test circuit for switching times 9. Package outline 0.62 0.55 0.55 0.47 0.50 0.46 3 0.30 0.22 0.65 0.30 0.22 2 1.02 0.95 1 0.20 0.12 0.35 Dimensions in mm Fig 9. Package outline SOT883 (SC-101) PMBT3904M_1 Product data sheet 03-04-03 © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 7 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 PMBT3904M [1] SOT883 2 mm pitch, 8 mm tape and reel -315 For further information and the availability of packing methods, see Section 14. 11. Soldering 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig 10. Reflow soldering footprint SOT883 (SC-101) PMBT3904M_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 8 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBT3904M_1 20090721 Product data sheet - - PMBT3904M_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 9 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMBT3904M_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 July 2009 10 of 11 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 July 2009 Document identifier: PMBT3904M_1