Data Sheet

83B
PMBT3904MB
SO
T8
40 V, 200 mA NPN switching transistor
Rev. 1 — 7 March 2012
Product data sheet
1. Product profile
1.1 General description
NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted
Device (SMD) plastic package.
PNP complement: PMBT3906MB.
1.2 Features and benefits





Single general-purpose switching transistor
AEC-Q101 qualified
Ultra small SMD plastic package
Board-space reduction
Low package height of 0.37 mm
1.3 Applications
 General-purpose switching and amplification
 Mobile applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
40
V
IC
collector current
-
-
200
mA
hFE
DC current gain
100
180
300
VCE = 1 V;
IC = 10 mA
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
emitter
Simplified outline
Graphic symbol
3
1
3
3
collector
1
2
Transparent
top view
2
sym021
PMBT3904MB
NXP Semiconductors
40 V, 200 mA NPN switching transistor
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PMBT3904MB
Description
Version
leadless ultra small plastic package; 3 solder lands; SOT883B
body 1.0  0.6  0.37 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMBT3904MB
0100 0111
[1]
For SOT883B binary marking code description see Figure 1.
4.1 Binary marking code description
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
PMBT3904MB_1
Product data sheet
SOT883B binary marking code description
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NXP Semiconductors
40 V, 200 mA NPN switching transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
40
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
200
mA
ICM
peak collector current
single pulse;
tp  1 ms
-
200
mA
IBM
peak base current
single pulse;
tp  1 ms
-
100
mA
Ptot
total power dissipation
Tamb  25 C
-
250
mW
[1][2]
[1][3]
PMBT3904MB_1
Product data sheet
-
590
mW
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C
[1]
Reflow soldering is the only recommended soldering method.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 March 2012
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NXP Semiconductors
40 V, 200 mA NPN switching transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
Rth(j-a)
in free air
Min
Typ
Max
Unit
[1][2]
-
-
500
K/W
[1][3]
-
-
212
K/W
[1]
Reflow soldering is the only recommended soldering method.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
006aab603
103
duty cycle =
1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.2
0.1
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMBT3904MB_1
Product data sheet
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40 V, 200 mA NPN switching transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
ICBO
Conditions
Min
Typ
Max
Unit
collector-base cut-off VCB = 30 V; IE = 0 A
current
-
-
50
nA
IEBO
emitter-base cut-off
current
VEB = 6 V; IC = 0 A
-
-
50
nA
hFE
DC current gain
VCE = 1 V
IC = 0.1 mA
60
180
-
IC = 1 mA
80
180
-
IC = 10 mA
100
180
300
60
105
-
IC = 50 mA
IC = 100 mA
30
50
-
collector-emitter
saturation voltage
IC = 10 mA; IB = 1 mA
-
75
200
mV
IC = 50 mA; IB = 5 mA
-
120
300
mV
VBEsat
base-emitter
saturation voltage
IC = 10 mA; IB = 1 mA
650
750
850
mV
IC = 50 mA; IB = 5 mA
-
850
950
mV
td
delay time
-
-
35
ns
tr
rise time
-
-
35
ns
ton
turn-on time
VCC = 3 V; IC = 10 mA;
IBon = 1 mA;
IBoff = 1 mA
-
-
70
ns
ts
storage time
-
-
200
ns
tf
fall time
-
-
50
ns
toff
turn-off time
-
-
250
ns
Cc
collector capacitance VCB = 5 V; IE = ie = 0 A;
f = 1 MHz
-
-
4
pF
Ce
emitter capacitance
VEB = 500 mV;
IC = ic = 0 A; f = 1 MHz
-
-
8
pF
fT
transition frequency
VCE = 20 V; IC = 10 mA;
f = 100 MHz
300
-
-
MHz
NF
noise figure
VCE = 5 V; IC = 100 A;
RS = 1 k;
f = 10 Hz to 15.7 kHz
-
-
5
dB
VCEsat
[1]
PMBT3904MB_1
Product data sheet
[1]
Pulse test: tp  300 s;   0.02.
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40 V, 200 mA NPN switching transistor
006aab115
600
006aab116
0.20
IB (mA) = 5.0
4.5
4.0
3.5
3.0
2.5
IC
(A)
hFE
0.15
400
2.0
(1)
1.5
1.0
0.10
0.5
(2)
200
0.05
(3)
0
10−1
1
10
102
0.0
103
0
2
IC (mA)
4
6
8
10
VCE (V)
Tamb = 25 C
VCE = 1 V
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 3.
DC current gain as a function of collector
current; typical values
PMBT3904MB_1
Product data sheet
Fig 4.
Collector current as a function of
collector-emitter voltage; typical values
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40 V, 200 mA NPN switching transistor
006aab117
1.2
006aab118
1.3
VBEsat
(V)
VBE
(V)
(1)
0.8
(1)
0.9
(2)
(2)
(3)
(3)
0.5
0.4
0
10−1
1
10
102
0.1
10−1
103
1
10
VCE = 1 V
IC/IB = 10
(1) Tamb = 55 C
(1) Tamb = 55 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 150 C
(3) Tamb = 150 C
Fig 5.
102
103
IC (mA)
IC (mA)
Base-emitter voltage as a function of collector
current; typical values
Fig 6.
Base-emitter saturation voltage as a function
of collector current; typical values
006aab119
1
VCEsat
(V)
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 7.
Collector-emitter saturation voltage as a function of collector current; typical values
PMBT3904MB_1
Product data sheet
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Rev. 1 — 7 March 2012
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PMBT3904MB
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40 V, 200 mA NPN switching transistor
8. Test information
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mlb826
VI = 5 V; t = 600 s; tp = 10 s; tr = tf  3 ns
R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 
VBB = 1.9 V; VCC = 3 V
Oscilloscope: input impedance Zi = 50 
Fig 8.
Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
0.65
0.55
0.40
0.34
0.35
0.20
0.12
1
0.04 max
2
0.30
0.22
1.05
0.65
0.95
0.30
0.22
3
0.55
0.47
Dimensions in mm
Fig 9.
PMBT3904MB_1
Product data sheet
11-11-02
Package outline SOT883B
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Rev. 1 — 7 March 2012
© NXP B.V. 2012. All rights reserved.
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40 V, 200 mA NPN switching transistor
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
10000
PMBT3904MB SOT883B
[1]
2 mm pitch, 8 mm tape and reel
-315
For further information and the availability of packing methods, see Section 14.
11. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Reflow soldering is the only recommended soldering method.
Fig 10. Reflow soldering footprint SOT883B
PMBT3904MB_1
Product data sheet
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Rev. 1 — 7 March 2012
© NXP B.V. 2012. All rights reserved.
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40 V, 200 mA NPN switching transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMBT3904MB v.1
20120307
Product data sheet
-
-
PMBT3904MB_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 March 2012
© NXP B.V. 2012. All rights reserved.
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40 V, 200 mA NPN switching transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PMBT3904MB_1
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
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40 V, 200 mA NPN switching transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMBT3904MB_1
Product data sheet
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40 V, 200 mA NPN switching transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Binary marking code description. . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 7 March 2012
Document identifier: PMBT3904MB_1