Analog Power AMB430N N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits PRODUCT SUMMARY rDS(on) (mΩ) 24 @ VGS = 10V 37 @ VGS = 4.5V DFN1.6x1.6-6L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 TA=25°C 7.7 ID Continuous Drain Current a TA=70°C 4.5 b IDM Pulsed Drain Current 30 a I 2.7 Continuous Source Current (Diode Conduction) S T =25°C 2.1 A PD Power Dissipation a TA=70°C 0.7 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a ID (A) 7.7 6.2 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 70 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AMB430N_1A Analog Power AMB430N Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a Diode Forward Voltage a gfs VSD Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.7 A VGS = 4.5 V, ID = 5.4 A VDS = 15 V, ID = 6.7 A IS = 1.35 A, VGS = 0 V Min Typ Max 1 ±100 1 25 12 Unit V nA uA A 24 37 7 0.75 mΩ S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 15 V, VGS = 4.5 V, ID = 6.7 A VDS = 15 V, RL = 2.3 Ω, ID = 6.7 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz 4.2 1.1 1.9 4 6 18 5 279 56 44 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AMB430N_1A Analog Power AMB430N Typical Electrical Characteristics 0.06 10 8 0.04 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 3.5V 4V 0.02 4.5V,6V,8V,10V 6 4 2 0 0 0 2 4 6 8 0 10 ID-Drain Current (A) 2 3 4 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.1 100 TJ = 25°C ID = 6.7A TJ = 25°C 0.08 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 1 0.06 0.04 0.02 0 10 1 0.1 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 10 400 F = 1MHz 350 10V,8V,6V,4.5V Ciss 300 Capacitance (pf) ID - Drain Current (A) 8 4V 6 3.5V 4 250 200 150 Coss 100 2 Crss 50 0 0 0 0.1 0.2 0.3 0.4 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AMB430N_1A Analog Power AMB430N Typical Electrical Characteristics 2 VDS = 15V ID = 6.7A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 1.5 1 0.5 0 2 4 6 8 10 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 30 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 25 20 15 10 5 Limited by RDS 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 RθJA(t) = r(t) + RθJA 0.1 RθJA = 175 °C /W 0.05 0.02 P(pk) t1 t2 Single Pulse 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AMB430N_1A Analog Power AMB430N Package Information © Preliminary 5 Publication Order Number: DS_AMB430N_1A